A computer study of the miscibility limits of Sb1bTe1bBi (original) (raw)

1978, Materials Research Bulletin

The quaternary system Sb°Te-Bi-Se with small amounts of suitable dopants is of interest for the manufacture of thermoelectric modules which exhibit the Peltier and Seebeck effects. This property could be useful in the production of energy from the thermoelectric effect. Other substances are bismuth telluride (Bi2Te 3) and Sb-Te-Bi and compounds such as ZnIn2Se4. In the present paper the application of computer programs such as MIGAP of Kaufman is used to indicate the stability of the ternary limits of Sb-Te-Bi within the temperature ranges of interest, namely 273 K to 300 K.

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Experimental electronic structure of the thermoelectric materials Bi 2 Te 3 and Sb 2 Te 3

In this work, high vacuum (10-6 Torr) annealed (at 500°C) samples of the thermoelectric materials Bi 2 Te 3 and Sb 2 Te 3 were analyzed in terms of local structures and electron density distribution. After annealing, the samples were analyzed for their structural properties using powder X-ray diffraction data. The electron density distribution has been analyzed using the MEM (maximum entropy method) and the precise bonding in Bi 2 Te 3 and Sb 2 Te 3 has been determined.

Ultra thin bismuth selenide-bismuth telluride layers for thermoelectric applications

Materials Chemistry and Physics, 2019

• Thin films of BieTeeSe alloys were deposited by the vacuum thermal evaporation technique. • Bulk alloys and thin films of our products are polycrystalline in the form of hexagonal Bi 2 Se 3 and Bi 2 Te 3 structure. • Power factor of 74 μ W/mK 2 was observed as the maximum value for Bi 2 Te 3 near room temperature. • Mechanical stress test was performed in order to investigate the suitability of our films for thermoelectric modulus. A B S T R A C T Crystalline thin films of BieTeeSe were deposited onto well cleaned glass substrates (BK7 type) by the vacuum thermal evaporation technique at a pressure of 10 −3 Pa. Bulk samples were used as targets to evaporate the corresponding films. The internal microstructure of bulk samples and films were characterized by x-ray dif-fraction (XRD). Identifications of the microstructure and the surface morphology of the bulk and thin film samples were determined using scanning electron microscopy (SEM). Powder of the bulk alloys and the thin films of our products were observed to be polycrystalline in the form of hexagonal Bi 2 Se 3 and Bi 2 Te 3 structure. The material characteristic power factor of 74 μ W/mK 2 was observed as the maximum value of power factor obtained in our study, and that was for Bi 2 Te 3 near room temperature. The dimensionless figure of merit (ZT) was estimated based on Seebeck coefficient and electrical conductivity measurements alongside with thermal conductivity estimations. ZT values of Bi 2 Se 3 and Bi 2 Se 1.5 Te 1.5 were significantly enhanced as temperature increased , whilst, ZT of Bi 2 Te 3 exhibited an opposite behavior. A mechanical stress test was performed in order to investigate the suitability of our films for thermoelectric modulus.

Thermoelectric properties of Tl‐doped Bi2Se3 single crystals

Crystal Research and Technology, 2009

The single crystals of the ternary system based on Bi2‐xTlxSe3 (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ⊥c , Hall coefficient RH (B∥c), and Seebeck coefficient S (ΔT ⊥c). The measurements indicate that by incorporating Tl in Bi2Se3 one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice – formation of substitutional defects thallium on the site of bismuth TlBi and the decrease of concentration of selenium vacancies VSe+2. We also discuss the temperature dependence of the power factor σS2 of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi2Se3. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Thermoelectric Properties of (Bi2Te3)1 − x − y (Sb2Te3) x (Sb2Se3) y Single Crystals

Inorganic Materials, 2005

Homogeneous and graded n-and p-type (Bi 2 Te 3 ) 1 -x -y (Sb 2 Te 3 ) x (Sb 2 Se 3 ) y crystals are grown by the Czochralski technique with melt supply through a floating crucible. The dimensionless thermoelectric figure of merit of the n-and p-type crystals is ZT = 1.1 (350 K) and 1.0 (375 K), respectively. It is shown that (Bi 2 Te 3 ) 1 − x -y (Sb 2 Te 3 ) x (Sb 2 Se 3 ) y pseudoternary solid solutions can be used to produce monolithic n-and ptype graded and segmented thermoelectric materials by Czochralski growth. The thermoelectric power distribution across the seed-crystal interface is studied using scanning hot microprobe measurements.

Performance of Bi–Te–Sb–Se Thermoelectric Material at Low Temperature

International Journal of Thermophysics, 2006

Thermoelectric materials are of interest for applications as heat pump and power generators. The performance of a thermoelectric material, the figure of merit, ZT, is measured. The figure of merit is interrelated to the thermal conductivity, electrical conductivity, and Seebeck coefficient. All of these parameters are functions of temperature. The performance of a BiTe -Sb-Se thermoelectric material at low temperature was studied experimentally in this work. Based on the experimental results, the relation between various parameters and temperature, and the figure of merit are reported. The conclusions indicate that this thermoelectric material is not suitable for power generation at low temperature, and only an improvement of production technology or the development of a new production method can improve the electrical power generation performance with this method.

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