The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy (original) (raw)
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2012
Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si 3 N 4 /TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto MgO(001), with a substrate potential of À250 V, in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). The TiN(001) films were grown at 600 C and the 4-ML-thick Si 3 N 4 overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al K a X-radiation at 0.83401 nm. Si 3 N 4 /TiN(001) Ti 2p spectra reveal enhanced unscreened final-state satellite peaks, compared to Ti 2p spectra obtained from uncapped TiN(001), due to decreased electronic screening induced by Si 3 N 4 /TiN(001) bilayer interfacial polarization. V
Surface Science Spectra, 2012
Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si 3 N 4 /TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto MgO(001), with a substrate potential of À250 V, in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). The TiN(001) films were grown at 600 C and the 4-ML-thick Si 3 N 4 overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al K a X-radiation at 0.83401 nm. Si 3 N 4 /TiN(001) Ti 2p spectra reveal enhanced unscreened final-state satellite peaks, compared to Ti 2p spectra obtained from uncapped TiN(001), due to decreased electronic screening induced by Si 3 N 4 /TiN(001) bilayer interfacial polarization. V
2012
Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition on MgO(001), with an electrically floating substrate potential of 7 V, in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). The TiN(001) films were grown at 600 C and the 4-ML-thick Si overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al K a x-radiation at 0.83401 nm. Si/TiN(001) Ti 2p spectra reveal reduced unscreened final-state satellite peaks compared to Ti 2p spectra obtained from uncapped TiN(001) due to increased electronic screening. V
Surface Science Spectra, 2012
X-ray photoelectron spectroscopy (XPS) was used to analyze Ti/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition on MgO(001), with an electrically floating substrate potential of 7 V, in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). The TiN(001) films were grown at 600 C and the 4-ML-thick Ti overlayers at room temperature. XPS spectra were obtained using incident monochromatic Al K a x-radiation at 0.83401 nm. Ti/TiN(001) Ti 2p spectra reveal reduced unscreened final-state satellite peaks compared to Ti 2p spectra obtained from uncapped TiN(001) due to increased electronic screening.
2012
Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze as-deposited epitaxial TiN(001) layers grown in situ. The films were grown by ultrahigh vacuum reactive magnetron sputtering onto MgO(001) at 600 C in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). AR-XPS spectra were obtained using incident monochromatic Al K a radiation at 0.83401 nm. The results show that the TiN(001) surfaces are free of O and C. The Ti 2p photoelectron spectra of clean TiN are characterized by 2p 3/2 and 2p 1/2 lines appearing at 454.
A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy
Applied Surface Science, 2018
In this paper, a comprehensive X-ray photoelectron spectroscopy (XPS) study of the first atomic layers of TiN nanofilms grown by ion beam assisted deposition on crystalline silicon is reported. This deposition technique allows a fine control of the ion species and energy arriving at the substrate. The substrates are prepared by ion beam cleaning involving Xe+ ion bombardment in different partial pressures of molecular H2. The expected hydrogen passivation effect by the Si–H formation bond limiting the Si–O bonds was quantitatively evaluated and correlated with some retention of H and O at the substrate surface. The effects of molecular H2 and residual H2O atmosphere present during the process on the chemical bonding on both the naked Si substrate and afterward on the interface are reported. A detailed XPS analysis performed in an attached UHV chamber to the preparation chamber of the TiN/Si interface shows that the bombarding cleaning procedure plays an important role in the bond formation at the interface since minute amounts the oxygen jeopardize the bulk properties.
Crystals
Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.