Si3N4 Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy (original) (raw)

Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze TiN/Si 3 N 4 bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto Si(001), with an electrically floating substrate potential of 7 V, in mixed 1:1 Ar/N 2 discharges maintained at a total pressure of 0.5 Pa (3.75 Â 10 À3 Torr). The Si 3 N 4 layers were deposited at room temperature and the 4-ML thick TiN overlayers were grown at 600 C. AR-XPS spectra were obtained using incident monochromatic Al K a x-radiation at 0.83401 nm. TiN/Si 3 N 4 Ti 2p spectra reveal an unscreened final-state satellite intensity that lies between that of clean TiN(001) and Si 3 N 4 / TiN(001). V