Low-temperature graphene growth using epochal catalyst of PdCo alloy (original) (raw)

Effect of catalyst metal species for the synthesis of graphene using chemical vapor deposition method: A review

Malaysian Journal of Fundamental and Applied Sciences

Enormous characteristics exhibited by two-dimensional carbon-based nanomaterial, graphene attract current researchers in integrating this advanced material into the development of next-generation electronic, optoelectronic, photonic, and photovoltaic devices. The ultimate aim was to synthesis a single layer of graphene with large-size domain with less defect formation. The solid state of the graphene promises ultra-high performance in the devices due to ultra-high electron mobility. Within a decade, previous researchers have narrowed down their studies by applying different types of metal species as catalyst substrate in chemical vapor deposition method. The crucial part was to determine the characteristics of carbon precipitation and diffusion onto the metal surfaces. Each metal-based catalyst and its alloy revealed different behavior according to its carbon solubility and intrinsic properties. Until now, copper, nickel, and its alloy combination provide tremendous finding in the s...

A catalytic, catalyst-free, and roll-to-roll production of graphene via chemical vapor deposition: Low temperature growth

The application of graphene as a two-dimensional nano-material has gained wide interest in different research areas, but its use is still novel for scientists. There has been continuous progress in the development of different synthesis methods to readily produce graphene at a lower cost. Chemical vapor deposition (CVD) is a powerful process to produce graphene, and it is accompanied by other methods. The present article provides a detailed review of the synthesis of graphene by a CVD process at temperatures below 1000 C (LTCVD). In this work, challenges related to the use of plasma-assisted CVD, different carbon precursors, and catalysts are discussed.

Graphene Synthesis by Chemical Vapour Deposition (CVD): A Review on Growth Mechanism and Techniques

This review article deals with the growth mechanism and techniques of graphene synthesis using chemical vapour deposition (CVD). Different aspects of graphene synthesis and growth mechanism are reviewed based on current researches in the field of catalysis. Materials aspects such as the roles of hydrocarbon, gas, solid and liquid are discussed. Effect of experimental parameters on growth-control such as temperature, vapour pressure, gas flow rate, annealing time and scalability on graphene diameter and distribution are explained. The advantages of growing graphene directly on dielectric substrates were also discussed. Finally, recommendation on where the future holds were postulated.

Synthesis of single- and few- layer graphene by chemical vapor deposition of methane on copper and platinum

2014

Graphene has been in the spotlight of research activity for the past decade, this twodimensional lattice of carbon atoms has strong SP2 covalent bonds that give the material characteristics unmatched by any other substance in terms of mechanical strength, electrical and heat conductivity, as well as flexibility. This project explored the synthesis of Graphene using chemical vapor deposition (CVD), a process well known for its ability to produce high quality, defect-free solid materials. The system was modified to chemically deposit Methane onto Platinum and Copper catalysts at temperatures nearing 1040° C. The resulting samples were characterized using Raman Spectroscopy, the Raman spectrums provide essential information regarding the number of layers in the Graphene structure and whether or not the structure is free of defects. The analyzed Raman spectrums of Graphene on platinum indicate that the relationship between the flow rate and the intensity peak ratio of the 2D/G bands as ...