Probing graphene grain boundaries with optical microscopy (original) (raw)
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Nature Materials, 2011
The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour deposition on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene’s electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman ‘D’ peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.
Periodic grain boundaries formed by thermal reconstruction of polycrystalline graphene film
Journal of the American Chemical Society, 2014
Grain boundaries consisting of dislocation cores arranged in a periodic manner have well-defined structures and peculiar properties and can be potentially applied as conducting circuits, plasmon reflectors and phase retarders. Pentagon-heptagon (5-7) pairs or pentagon-octagon-pentagon (5-8-5) carbon rings are known to exist in graphene grain boundaries. However, there are few systematic experimental studies on the formation, structure and distribution of periodic grain boundaries in graphene. Herein, scanning tunneling microscopy (STM) was applied to study periodic grain boundaries in monolayer graphene grown on a weakly interacting Cu(111) crystal. The periodic grain boundaries are formed after the thermal reconstruction of aperiodic boundaries, their structures agree well with the prediction of the coincident-site-lattice (CSL) theory. Periodic grain boundaries in quasi-freestanding graphene give sharp local density of states (LDOS) peaks in the tunneling spectra as opposed to the...
Probing the Electrical Properties of Overlapped Graphene Grain Boundaries by Raman spectroscopy
2014
The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the boundaries, grown by chemical vapor deposition (CVD) and subsequently doped by the oxidized Cu substrate. We analyze overlapped regions between 60 and 220 nm wide via Raman spectroscopy, and find that some of these overlapped boundaries contain AB stacked bilayers. The Raman spectra from the overlapped grain boundaries are distinctly different from bilayer graphene and exhibit splitting of the G band peak. The degree of splitting, peak widths, as well as peak intensities depend on the width of the overlap. We attribute these features to inhomogeneous doping by charge carriers (holes) across the overlapped regions via the oxidized Cu substrate. As a result, the Fermi level at the overlapped grain boundaries lies between 0.3 and 0.4 eV below the charge neutrality point. Our results suggest an enhancement of electrical conductivity across overlapped grain boundaries, similar to previously observed measurements(1). The dependence of charge distribution on the width of overlapping of grain boundaries may have strong implications for the growth of large-area graphene with enhanced conductivity.