Photoreflectance study of photovoltage effects in GaAs diode structures (original) (raw)

Photoreflectance measurements of GaAs p-i-n and s-i-n diodes were conducted over a temperature range of 50-450 K to investigate photovoltage effects. The study reveals that the photovoltage influences the electric field within the intrinsic region and can be measured without reference to the surface Fermi energy. The findings demonstrate a strong correlation between the electric field strength and the determined photovoltage across both diode structures, providing insights into the underlying photovoltage mechanisms in semiconductor materials.