Coulomb localization in orbital degenerate, doped Mott insulators (original) (raw)

This study investigates electron localization in a three-band extended Hubbard model focused on doped vanadium perovskites, specifically La 1−x Ca x VO 3. The presence of Coulomb potentials from Ca defects and their impact on long-range electron-electron interactions are analyzed. Key findings include the persistence of the Mott gap even at high doping, the development of a defect states gap near the Fermi energy, and the implications for spin-orbital polarons formed by doped holes. The research highlights the unique stability of spin and orbital order in these materials compared to other systems.