Electronic phase transitions in transparent zinc oxide thin films (original) (raw)

Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 2013

Abstract

ABSTRACT The peculiarities of charge carrier transfer mechanism in ZnO films doped by donor or acceptor impurity and metal-dielectric electronic phase transition were investigated. The control parameter of this transition is concentration of interstitial Zn atoms. The films with high concentration of interstitial Zn atoms have high conductivity of metallic type. Air annealing leads to change of conductivity temperature dependence from metallic type to dielectric one.

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