Characteristics and applications of Polymeric Thin Film Transistor: Prospects and challenges (original) (raw)

Organic-polymer thin-film transistors for active-matrix flat-panel displays?

Journal of the Society for Information Display, 2003

Organic-polymer-based thin-film transistors (OP-TFTs) look very promising for flexible, large-area, and low-cost organic electronics. In this paper, we describe devices based on spin-coated organic polymer that reproducibly exhibit field-effect mobility values around 5×10 -3 cm 2 /V-sec. We also address fabrication, performance, and stability issues that are critical for the use of such devices in active-matrix flat-panel displays.

The application of a high-k polymer in flexible low-voltage organic thin-film transistors

Although much progress has been made in the study of high-mobility organic semiconductors in recent years, one major challenge for organic thin film transistors (OTFTs) in real applications is the relatively high operating voltage, which is mainly related to the gate dielectric of the OTFT. Here we show the application of a high-k poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) as the gate dielectric of flexible low-voltage pentacene OTFTs for the first time. The performance of the OTFTs is optimized by modifying the surface of P(VDF-TrFE-CFE) films with various thin polymer films by a solution process. The flexible OTFTs show excellent performance at the operating voltage of 4 V and good stability after 1000 bending tests. It is expected that P(VDF-TrFE-CFE) is a suitable gate dielectric for low-voltage OTFTs based on various small-molecule organic semiconductors because P(VDF-TrFE-CFE) terpolymer films can be easily modified with different thin polymer films by a solution process.

Organic Thin Film Transistor Architecture, Parameters and their Applications

Organic Thin Film Transistors (OTFTs) are promising devices for future development of variety of low-cost and large-area electronics applications such as flexible displays. This paper analyzes the performance of OTFT made of several organic semi conducting and insulating materials and further discusses their applications. Analysis of previous research work demonstrates that the mobility in OTFT decreases when the product of semi conducting film thickness and gate capacitance per unit area increases. The decrease is specified by a power law function with parameters for several organic semiconductors. OTFT characteristics have undergone spectacular improvements during the last few years. This paper explores the effect of variation of channel length from 40 nm to 20 nm on drain current for pentacene bottom contact structure. Variations in these quantities maps to variations in the electrical behaviour of devices. It has been found that drain current increases due to decrease in length of organic thin film conducting channel. It reviews recent progress in parameter properties for device designs and applications related to OTFTs. The performance of OTFTs is evaluated in terms of mobility, on/off current ratio, threshold voltage and sub threshold slope. This paper thoroughly discusses the overall performance and applications of OTFTs in various fields.

Organic thin film transistors characteristics parameters, structures and their applications

2011

The differences in drain current and drain voltage characteristics of top gate and bottom gate Organic Thin Film Transistor (OTFT) structures are analyzed by two dimensional numerical device simulators. Further discussion shows different characteristics parameters of OTFTs. Transistor based on organic semiconductor (conjugated or conducting polymers) as active layer to manage electric current flow is known as OTFTs. The performance parameters of OTFTs are evaluated from output and transfer characteristics of different structures of OTFTs. Device characteristics parameters have been evaluated in terms of drain current, mobility, on/off current ratio, threshold voltage, subthreshold slope and transconductance. OTFTs are considered as promising device for future development of their various applications in the areas of low-cost and large-area electronics. Further this paper thoroughly discusses the overall performance and applications of OTFTs in various fields.

Time dependence of organic polymer thin film transistor current

Organic Field Effect Transistors II, 2003

We present results on the electrical characterization of gate-planarized organic polymer thin-film transistors (OP-TFTs). We investigated the time dependence of the OP-TFT current. Over a relatively short time range (several 100ms), we observed a decrease of the OP-TFT current corresponding to the establishment of the steady-state regime, and is slower when the transistor is in the weak accumulation regime or in the OFF-state. We believe that this is associated with carrier thermalization in the organic semiconductor. Over longer time scales, the decrease of the OP-TFT current is due to device aging and can be associated with a threshold voltage shift, up to 20V after an electrical stress at V GS =-30V for 30min at room temperature. This shift is fully reversible once the gate polarization is removed and might be associated with charge trapping in the semiconductor.

Source / drain contacts in organic polymer thin film transistors

2000

Organic polymer based thin-film transistors (OP-TFTs) look very promising for flexible organic electronics. In this paper, we describe devices based on a gate-planarized structure and using spin-coated organic polymer. We have analyzed the role of the device source and drain contacts and we present data indicating Schottky behavior of the contacts in OP-TFTs. In addition, we describe a quantitative evaluation

Gate-planarized organic polymer thin film transistors

Journal of Electronic Materials, 2002

INTRODUCTION Organic semiconductor electronic devices have a considerable potential in broad-area low-cost elec-tronics applications. Organic semiconductors can be divided into two main groups:1 oligomers and poly-mers. In general, the oligomers deposited by evapo- ...

Organic thin-film transistors: A review of recent advances

IBM Journal of Research and …, 2001

In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. We also review in more detail related work that originated at IBM during the last four years and has led to the fabrication of highperformance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.

Organic thin-film transistors with polymeric gate insulators

Journal of Non-crystalline Solids, 2008

Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using spin-coated polymeric gate insulators, including polymethyl methacrylate (PMMA) and a novel poly(methylmethacrylate-co-glycidylmethacrylate) (P(MMA-co-GMA)). These devices behaved fairly well and showed satisfactory p-type electrical characteristics. The transistor with P(MMA-co-GMA) gate insulator showed higher field-effect mobility, l FET = 1.22 · 10 À2 cm 2 /V s, larger on/off current ratio, I on /I off = 7 · 10 3 and lower threshold voltage, V T = À8 V, compared with the transistor with PMMA gate insulator (l FET = 5.89 · 10 À3 cm 2 /V s, I on /I off = 2 · 10 3 and V T = À15 V). The higher mobility of CuPc on P(MMA-co-GMA) was attributed to better ordering and enhanced crystallinity within the CuPc film and the better CuPc/P(MMA-co-GMA) interface, as observed by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. The correlation between the structural properties and the device performance of CuPc films grown on different polymeric gate insulators is discussed.