Two-dimensional defects in silicon after annealing in wet oxygen (original) (raw)

Philosophical Magazine

Abstract

After a silicon slice with a mechanically damaged surface was annealed at 1200°C for 2 hours in wet oxygen, two-dimensional defects were present extending from the surface into the slice. The defects are shown to be thin plates of amorphous material, probably oxide, and it is suggested that they arise by a mechanism analogous to that described by Silcock and

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