Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN (original) (raw)

Solid State Communications, 1998

Abstract

Temperature dependent studies of the resonant and phonon-assisted radiative recombination of free excitons (FEs) in GaN are performed and are analyzed within the polariton concept. A strong impurity scattering of exciton-polaritons is proposed to be responsible for the revealed unusual behavior of the free A exciton in GaN, i.e. an enhanced intensity of the resonant FE emission in comparison with

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