Linear and nonlinear-optical properties of GaN thin films (original) (raw)

Optical spectroscopic investigation of m-plane GaN thin films

Antaryami Mohanta

Optical Materials Express, 2014

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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

silke christiansen

MRS Internet Journal of Nitride Semiconductor Research, 1996

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Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

M. Umeno

Applied Physics Letters, 1998

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Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Belgacem Jani

Journal of Crystal Growth, 2007

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Optical and structural characterization of GaN thin films at different N to Ga flux ratios

M. Willander, M. Karlsteen

Journal of Applied Physics, 2011

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Analysis of polarization-dependent photoreflectance studies for c -plane GaN films grown on a -plane sapphire

Norbert Esser

physica status solidi (a), 2009

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Study of the optical and structural properties of GaN films grown on Si substrates with a SiC layer

mario vazquez lira

Thin Solid Films, 2003

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Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

Saleh Hassan

Optics & Laser Technology, 2009

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Optical properties of GaN with Ga and N polarity

P. Visconti

MRS Proceedings, 2001

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Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire

Joseph Salzman

Journal of Electronic Materials, 2000

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Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Govind Gupta

Journal of vacuum science and technology, 2018

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Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE

Zied Chine, Amor Bchetnia

Superlattices and Microstructures, 2015

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Optical Properties of GaN Nanostructures for Optoelectronic Applications

Yarub Al-Douri

Procedia Engineering, 2013

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Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire

Boris Meyler

Journal of Electronic Materials, 2003

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Structural characterization of non-polar (1120) and semi-polar (1126) GaN films grown on r-plane sapphire

Theodore Moustakas

Journal of Crystal Growth, 2008

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Structure of GaN Films Grown by Molecular ,Beam Epitaxy on (0001) Sapphire

Theodore Moustakas

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Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

Ahmed Elnaggar

Journal of Materials Science: Materials in Electronics, 2011

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Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

H. Morkoç

Journal of Applied Physics, 2016

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The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Özgür Duygulu

2009

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Characterization of GaN layers by second harmonic generation and photoluminescence

Saulius Juodkazis

Smart Optical Inorganic Structures and Devices, 2001

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Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

Alison Baski

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002

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Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements

Zohra Benzarti

Journal of Electronic Materials, 2015

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Nonlinear optical characterization of single-crystalline GaN by Z-scan technique

Cid B de Araújo

Proceedings of …, 2001

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Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

Volker Heydemann

Vacuum, 2006

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GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties

Anna Cavallini

The European Physical Journal Applied Physics, 2004

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Optical anisotropy in GaN grown onto A–plane sapphire

Javier Campo

Materials Science and Engineering: B, 1999

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Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Thomas Kuech

Materials Science and Engineering: B, 1997

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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Morgan Ware

Nanoscale Research Letters

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Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire

Zvonimir Bandic

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999

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