Progress on background signal analysis of bare wafer inspection systems based on light scattering for III/V epitaxial growth monitoring (original) (raw)

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014), 2014

Abstract

ABSTRACT The purpose of this paper is to elucidate other applications where the low frequency component of background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different processes. During initial epitaxial development cycles a fast method of qualifying the growth runs is required. While SEM inspections can sub-sample the wafer, a semi-quantitative way of qualifying growth can be immensely helpful in speeding up the process. In this paper we monitor the epitaxial growth of III/V materials by two different methods: 1) strain relaxed buffers (SRB approach); and, 2) selective epitaxial growth (SEG approach) by using the haze.

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