Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy (original) (raw)

This work presents the room temperature performance of low threshold GaInNAs-GaAs quantum-well laser diodes (LDs) grown by molecular beam epitaxy, achieving lasing emission wavelengths of 1.338 µm and 1.435 µm with threshold current densities of 1518 A/cm² and 1755 A/cm², respectively. The findings indicate that these LDs can deliver power outputs of 0.20 W/A and 0.15 W/A, with characteristic temperatures of 78 K and 62 K, showcasing notable efficiency without the need for strain compensation layers or complex postgrowth treatments.