Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy (original) (raw)
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1.5μm GaInNAs(Sb) lasers grown on GaAs by MBE
Journal of Crystal Growth, 2003
We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465 mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm 2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 mm, while still preserving luminescence efficiency as compared to 1.3 mm GaInNAs material. r
Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers
Semiconductor Science and Technology, 2003
We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 µm and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.
Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
IEEE Journal of Quantum Electronics, 2004
We present the first continuous-wave (CW) edge-emitting lasers at 1.5 m grown on GaAs by molecular beam epitaxy (MBE). These single quantum well (QW) devices show dramatic improvement in all areas of device performance as compared to previous reports. CW output powers as high as 140 mW (both facets) were obtained from 20 m 2450 m ridge-waveguide lasers possessing a threshold current density of 1.06 kA/cm 2 , external quantum efficiency of 31%, and characteristic temperature 0 of 139 K from 10 C-60 C. The lasing wavelength shifted 0.58 nm/K, resulting in CW laser action at 1.52 m at 70 C. This is the first report of CW GaAs-based laser operation beyond 1.5 m. Evidence of Auger recombination and intervalence band absorption was found over the range of operation and prevented CW operation above 70 C. Maximum CW output power was limited by insufficient thermal heatsinking; however, devices with a highly reflective (HR) coating applied to one facet produced 707 mW of pulsed output power limited by the laser driver. Similar CW output powers are expected with more sophisticated packaging and further optimization of the gain region. It is expected that such lasers will find application in next-generation optical networks as pump lasers for Raman amplifiers or doped fiber amplifiers, and could displace InP-based lasers for applications from 1.2 to 1.6 m.
Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 μm lasers
Journal of Crystal Growth, 2001
Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas source molecular beam epitaxy using a RF-plasma nitrogen radical beam source. The optimal growth condition for the quantum well structure was determined based on room-temperature photoluminescence measurements. Effects of rapid thermal annealing (RTA) on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes are examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, due to a removal of N induced nonradiative centers from GaInNAs wells. #
Journal of Applied Physics, 2004
The Sb-mediated growth of Al 0.65 Ga 0.35 As is studied for Sb/III flux ratios from 0% to 2% and growth temperatures from 580 to 720°C. The surface morphology and electrical properties are found to strongly depend on both the growth temperature and Sb flux. As an isoelectronic dopant, Sb improves the conductivity of n-Al 0.65 Ga 0.35 As and reduces the conductivity of pAl 0.65 Ga 0.35 As. As a surfactant, Sb improves the surface morphology of Al 0.65 Ga 0.35 As at all growth temperatures with the most dramatic improvement occurring at 670°C. The smoothest surface ͑0.2 nm root-mean-square roughness height͒ was obtained at 700°C using a Sb/III flux ratio of 0.02. This work demonstrates that Sb-mediated molecular beam epitaxy growth of n-AlGaAs effectively eliminates the ''forbidden temperature gap'' for device quality n-AlGaAs.
Japanese Journal of Applied Physics, 2004
A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown by metalorganic chemical vapor deposition (MOCVD) on a GaAs substrate is reported for 1.3 mm-wavelength lasers. GaInNAs wafers were grown at various growth temperatures, V/III ratios, and growth rates. The photoluminescence (PL) efficiency of GaInNAs/GaAs quantum wells (QWs) was increased by lowering the growth temperature and increasing the V/III ratio in the growth conditions conventionally used for nitrogen (N)-free GaInAs/GaAs QW growth. These conditions are important for realizing high PL efficiency because they prevent the inhomogeneity of the immiscible alloy of GaInNAs. It was also observed that the optimal window for the growth temperature, V/III ratio, and growth rate for the GaInNAs is narrower than that of N-free GaInAs QWs. After careful optimization of the growth conditions, GaInNAs/GaAs QW lasers with various emission wavelengths were fabricated. Low-threshold current densities of 0.17 kA/cm 2 /well, 0.18 kA/cm 2 /well, and 0.44 kA/cm 2 /well are obtained for emission wavelengths of 1.25 mm, 1.30 mm, and 1.34 mm, respectively. The results obtained for growth conditions and lasing characteristics are useful in further improving 1.3 mm or longer wavelength GaInNAs lasers grown by MOCVD.
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
IEEE Photonics Technology Letters, 2000
In this letter, results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QWs LDs that used GaAs as the barrier material. The introduction of nitrogen into the barriers reduces the spectral blue shift caused by post-growth annealing. Long wavelength emission out to 1.405 m was observed. The devices exhibited threshold current densities as low as 1.5 kA/cm 2 , high differential efficiency of 0.67 W/A, and a maximum output power of 350 mW.