Dielectric and ac conductivity studies in as-grown Ga2Te3crystals with the defect zinc-blende structure (original) (raw)

Ac conductivity and dielectric properties of Ga2S3–Ga2Se3 films

The ac conductivity and dielectric properties of amorphous Ga 2 S 3 -Ga 2 Se 3 solid solution in thin film form have been studied in the temperature range from 306 to 403 K and in the frequency range from 10 2 to 10 5 Hz. The ac conductivity was found to be proportional to o s . The exponent s was found to be 0.997 at room temperature and decreased with increasing temperature. It was found also that ac activation energy DE(o) has small values, which decreased with increasing frequency. It was found that relaxation time t was 5.2 Â 10 À5 s. These results were interpreted in terms of the correlated barrierhopping model. It was found also that the dielectric constant e 1 and dielectric loss e 2 decreased with the increase of frequency, while they decreased with increasing temperature in the investigated ranges. The calculated value of the barrier height W m (0.485 eV) according to the Guintini equation agreed with that proposed by the theory of hopping of charge carriers over a potential barrier.

Electrical and optical properties of amorphous Ga2Te3 films

Ga2Te3 has been prepared in bulk and thin film forms. The composition of films has been checked using energy dispersive X-ray (EDX) spectroscopy technique. X-ray diffraction (XRD) measurements have showed that the Ga2Te3 films evaporated at room temperature substrates were amorphous. Investigation of the I-V characteristics in amorphous Ga2Te3 films reveals that it is typical for a memory switch. The thickness dependence of the mean value of the switching voltage V th is linear in the investigated range and V th decreases exponentially with temperature in the range (298-393 K). The switching voltage activation energy (ε) calculated from the temperature dependence of V th is found to be 0.277 eV. Electrical conduction activation energy (Eσ) is found to be (0.564 eV). The agreement between the obtained value of the ratio ε/Eσ (0.49) and its value derived theoretically (0.5) suggests that the switching phenomenon in amorphous Ga2Te3 films is explained according to an electrothermal model for the switching process. The transmittance (T ) of Ga2Te3 thin films, has been measured over the wavelength range 400-2500 nm. From an analysis of the transmittance data, the optical constants, the refractive index (n) and the extinction coefficient (k), have been determined. Similarly the absorption coefficient (α) measurements, have been evaluated. Allowed nondirect transitions with optical energy gap (E opt g ) of 1.15 eV have been obtained. PACS. 72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys -73.

The nature of dielectric state and self compensation mechanisms in PbTe doped with Ga The nature of dielectric state and self compensation mechanisms in PbTe doped with Ga

The long-standing problem of impurity states in narrow-gap PbTe crystals doped with group-III element Ga was analized by means of density functional theory. We focus on the mechanisms of the self-compensation during growth as well as during post-growth annealing to clarify the mechanism of dielectric state formation necessary for the device fabrication. The unique feature of the presented work is consideration of the simplest impurity complex ( ) 2Ga Pb as well as of a lead vacancy V Pb , gallium substituting for Pb site Ga Pb and interstitial gallium Ga int in various charge states. Calculations show that complex ( ) 2Ga Pb has the lowest formation energy among other gallium-related defects and is a double donor. Ga int is a single donor while Ga Pb is amphoteric impurity which act as a donor or acceptor depending on the Fermi level position. Moreover, we conclude that neutral impurity Ga Pb 0 is metastable due to the self-compensation and formation of ( ) 2Ga Pb complex with simultaneous creation of V Pb . Calculated binding energy of this complex suggests that it is stable for the actual temperatures and concentrations. In addition the ( ) 2Ga Pb defect is responsible for spontaneous creation of lead vacancy which prevents an increasing of the carrier concentration. Therefore, the considered complex determines the most striking features of PbTe crystals doped with Ga, namely DX-like properties and dielectric state formation. This defect plays a crucial role in real crystals and clarifies the nature of properties important for device fabrication.

Dielectric relaxation in double-perovskite Ca2GdTaO6

The double perovskite oxide calcium gadolinium tantalate, Ca 2 GdTaO 6 (CGT) is synthesized by solid-state reaction technique. The Rietveld refinement of the X-ray diffraction pattern of the sample shows monoclinic phase at room temperature. Fourier transform infrared (FTIR) spectrum shows two primary vibrational modes of the sample at around 378 and 566 cm −1. Dielectric spectroscopy is applied to investigate the ac electrical conductivity of CGT in the temperature range 303-673 K and frequency range 42 Hz-1 MHz. The modified Cole-Cole equation is used to describe the relaxation mechanism in CGT. The relaxation time corresponding to dielectric loss is found to obey the Arrhenius law with an activation energy of 0.26 eV. The impedance data has been modeled by an equivalent circuit consisting of two serially connected R-CPE units, one for the grain and the other for the grain boundary, each containing a resistor (R) and a constant phase element (CPE). The frequency dependent conductivity spectra follow the Jonscher power law.

IRJET-Thermoelectric, transport and microstructure properties of binary chalcogenide Ga2Te3 Crystals

High quality crystals of Ga2Te3 compound were prepared by modified Bridgman technique, the microstructure and transport properties were investigated. The dependence of electrical conductivity, Hall effect, Hall mobility and charge carriers concentration on temperatures was performed in the temperature range (294 K - 553 K). The temperature dependence of the ac conductivity and the frequency exponent, s is reasonably well interpreted in terms of the correlated barrier-hopping CBH model. The dependence of thermoelectric power in the temperature was studded and a lot of semiconducting parameters (effective mass, life time, diffusion length and diffusion coefficient) were calculated.

Electronic and ionic conductivity in β-Ga2O3 single crystals

Journal of Applied Physics

In this work, we quantify electronic and ionic contributions to conductivity in the bulk and depletion widths of back-to-back sputtered Pt Schottky contacts on single crystals of β-Ga2O3. We also demonstrate asymmetric changes to these contacts induced by DC bias at temperatures as low as 200 °C, which has obvious bearing on the performance and reliability of devices. Crystals, which were unintentionally doped, doped with Zr donors, and doped with Mg acceptors, were characterized from room temperature to 900 °C. Electrochemical impedance spectroscopy, current–voltage (IV), capacitance–voltage, and the Wagner DC polarization method were employed to characterize changes in conductivity, doping, and built-in potentials with temperature and bias. This work demonstrates that ionic conductivity can be on-par with electronic conductivity in multiple circumstances in bulk crystal samples and leads to changes in Schottky contacts with an applied bias. While it has not been demonstrated that ...

The Peculiarities of The Electrical and Thermoelectrical Properties of p-Type Ag_2Te

Turkish journal of physics, 1999

The electrical and thermoelectrical properties of p-type Ag2Te have been investigated. Various peculiarities were observed: the minimum (at T \approx 65 K) and maximum (at T \approx 200 K) on the temperature dependence of conductivity s (T); the weak dependence of Hall coefficient R(T) (in 200-300 K range) and the maximum (at T \approx 100 K and 250 K) on the temperature dependence of thermal power a0 (T). The investigation results were interpreted by two-bands model. It is shown that mentioned peculiarities have been stimulated by the narrow gap of Ag2Te and its temperature dependence.

The nature of dielectric state and self compensation mechanisms in PbTe doped with Ga

Materials Research Express, 2014

The long-standing problem of impurity states in narrow-gap PbTe crystals doped with group-III element Ga was analized by means of density functional theory. We focus on the mechanisms of the self-compensation during growth as well as during post-growth annealing to clarify the mechanism of dielectric state formation necessary for the device fabrication. The unique feature of the presented work is consideration of the simplest impurity complex ( ) 2Ga Pb as well as of a lead vacancy V Pb , gallium substituting for Pb site Ga Pb and interstitial gallium Ga int in various charge states. Calculations show that complex ( ) 2Ga Pb has the lowest formation energy among other gallium-related defects and is a double donor. Ga int is a single donor while Ga Pb is amphoteric impurity which act as a donor or acceptor depending on the Fermi level position. Moreover, we conclude that neutral impurity Ga Pb 0 is metastable due to the self-compensation and formation of ( ) 2Ga Pb complex with simultaneous creation of V Pb . Calculated binding energy of this complex suggests that it is stable for the actual temperatures and concentrations. In addition the ( ) 2Ga Pb defect is responsible for spontaneous creation of lead vacancy which prevents an increasing of the carrier concentration. Therefore, the considered complex determines the most striking features of PbTe crystals doped with Ga, namely DX-like properties and dielectric state formation. This defect plays a crucial role in real crystals and clarifies the nature of properties important for device fabrication.

Dielectric relaxation and study of electrical conduction mechanism in BaZr0.1Ti0.9O3ceramics by correlated barrier hopping model

Materials Science-Poland, 2018

This work aims to study the electrical conduction mechanism in the dielectric material BaZr0.1Ti0.9O3(BZT) ceramics by applying AC signal in the frequency range of 102Hz to 106Hz. The phase purity and microstructure of the sample have been studied by X-ray diffraction refinement and field-emission scanning electron microscope (FE-SEM) analysis. The appearance of resonance peaks in the loss tangent at high temperature is due to inherent dielectric relaxation processes of this oxide. The temperature dependent Cole-Cole plot has been studied in details to determine both the grain and grain boundary contribution to the conductivity. Electrical modulus analysis reveals that the hopping of charge carriers is the most probable conduction mechanism in BZT ceramics. The obtained data of AC conductivity obey the universal double power law and have been discussed in terms of microstructural network characteristics. The behavior of frequency exponent n of AC conductivity as a function of temper...