Analytical modeling of contact resistance in organic transistors (original) (raw)
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An analytical solution for contact resistance of staggered organic field-effect transistors
Journal of Applied Physics, 2017
We have developed analytical models for bias dependent contact resistance (RC) and output characteristics of staggered organic field-effect transistors (OFETS) based on a bulk resistance-approximated and mobility-modified current-crowding method. Numerical evaluations of RC and its resistive components show that the bias dependency of the bulk resistance is negligible. Consequently, the properties of the active layer interfaces determine RC and its characteristics. Effective parameters include a normally constant charge injection barrier at the organic-metal interface (Eb) and a gate induced surface carrier-concentration (PS0) at the organic-insulator boundary. The energy barrier pertains to the fabrication process, and its related resistance (rc) can be determined as the fitting parameter of the theoretical model. However, PS0 is strongly gate bias dependent and the results of the numerical model indicate that the resulting component (rch) is dominant and has a considerable effect ...
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2019
In this paper, we model the characteristics of top and bottom gate configurations of organic thin film transistors (OTFTs) including top gate top contact (TGTC), top gate bottom contact (TGBC), bottom gate top contact (BGTC) , bottom gate bottom contact (BGBC). The path of charge carriers changes in different geometries which possess difference in the electrical behaivour of the devices. The performances of bottom and top gate pentacene based OTFT devices have been analyzed and their performance parameters like mobility, threshold voltage, sub threshold slope, trans conductance, on off ratio have been extracted and compared.
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