Fast and scalable memory characteristics of Ge-doped SbTe phase change materials (original) (raw)
Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivative
Suyoun Lee
2007
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Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
Geoffrey W Burr
Journal of Applied Physics, 2011
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Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Jose Gervacio
Crystallization - Science and Technology, 2012
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Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping
Kyung Hee University
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Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
Archy gu
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Si 3.5 Sb 2 Te 3 Phase Change Material for Low-Power Phase Change Memory Application
Xi Wei
Chinese Physics Letters, 2010
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Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
Sergey Kozyukhin
AIP Conference Proceedings, 2016
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Effect of doping on the crystallization kinetics of phase change memory materials on the basis of Ge–Sb–Te system
Sergey Kozyukhin
Journal of Thermal Analysis and Calorimetry, 2016
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Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application
Sergey Kozyukhin
Acta Physica Polonica A, 2016
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Characterization of phase change memory materials using phase change bridge devices
Geoffrey W Burr
Journal of Applied Physics, 2009
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A model structure for interfacial phase change memories: Epitaxial trigonal Ge1Sb2Te4
Detlev Grützmacher
Journal of Alloys and Compounds, 2016
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Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Hessel Sprey
2011 IEEE International Interconnect Technology Conference, 2011
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Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory
Mohamedahmed Mohamed
Applied Physics A, 2007
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Chalcogenide Materials Engineering for Phase‐Change Memory and Future Electronics Applications: From Sb–Te to Bi–Te
Masaki Takeguchi
physica status solidi (RRL) – Rapid Research Letters, 2020
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Epitaxial phase-change materials
Achim Trampert
physica status solidi (RRL) - Rapid Research Letters, 2012
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Ab‐initio calculations and structural studies of (SiTe)2(Sb2Te3)n (n: 1, 2, 4 and 6) phase‐change superlattice films
Junji Tominaga
physica status solidi (RRL) – Rapid Research Letters, 2014
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Investigation of the Crystallization Kinetics in the Phase Change Memory Materials of Ge–Sb–Te System
Sergey Kozyukhin
Springer Proceedings in Energy, 2016
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Mechanisms of retention loss in Ge2Sb2Te5-based PhaseChange Memory
Mark Lamorey
2008
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Driving forces for elemental demixing of GeSbTe in phase-change memory: Computational study to design a durable device
Tae-Youl Yang
Current Applied Physics, 2013
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Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device
DONGSEOK SUH
Physical Review B, 2006
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Material and Design Challenges in Phase Change Memory
Wenfa Ng
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Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Faruk Dirisaglik
Cornell University - arXiv, 2022
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Hybrid density functional study of electronic and optical properties of phase change memory material: Ge[sub 2]Sb[sub 2]Te[sub 5]
Muhammad Ramzan
Journal of Applied Physics, 2013
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Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory
S. Raoux
2008 IEEE International Electron Devices Meeting, 2008
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One-Dimensional Thickness Scaling Study of Phase Change Material (hboxGe2hboxSb2hboxTe5)(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})(hboxGe2hboxSb2hboxTe5) Using a Pseudo 3-Terminal Device
Byoung Jae Bae
IEEE Transactions on Electron Devices, 2011
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Electrical switching dynamics in circular and rectangular Ge[sub 2]Sb[sub 2]Te[sub 5] nanopillar phase change memory devices
O. Ozatay, Bruce Terris
Journal of Applied Physics, 2008
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Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
Shuchang Wang
Applied Surface Science, 2006
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Interfacial phase-change memory
J. Tominaga
Nature Nanotechnology, 2011
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Sb-Se-based phase-change memory device with lower power and higher speed operations
Se-Young Choi
IEEE Electron Device Letters, 2000
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Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories
Claudio Barbon
Microelectronics International, 2019
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Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM
Seung-Joon Jeon
NPG Asia Materials, 2015
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