TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates (original) (raw)
Related papers
MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires
Journal of the Korean Physical Society, 2008
We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels (4 T1 → 6 A1) was observed in the ZnMnTe nanowires.
Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies
Nanotechnology, 2007
ZnTe nanowires were grown by molecular beam epitaxy on GaAs substrates of three different orientations: (100), (110), and (111)B. The catalyst droplets were produced through in situ annealing of a previously deposited Au layer and by forming the eutectic alloy with Ga from the substrate. The influence of substrate orientation and growth parameters on the properties of nanowires was investigated using scanning and transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray diffraction. The growth process was based on the vapour-liquid-solid mechanism and the contribution of the diffusion-induced effect in this mechanism was confirmed by correlating the length and the diameter of the produced nanowires. The nanowires had diameters ranging from 30 to 70 nm and lengths between 1 and 2 μm. The growth axis of the nanowires was 111 and the nanowires grew along 111 directions of the substrate, independent of the substrate orientation used. The nanowires had stacking faults at the bottom and those grown at optimal conditions possessed perfect cubic structure near the top.
Computational Materials Science, 2021
The mechanical properties of Cadmium Selenide (CdSe) nanowire is an emerging issue due to its application in semiconductor and optoelectronics industries. In this paper, we conducted molecular dynamics (MD) simulations to investigate the temperature-dependent mechanical properties and failure behavior of Zinc-Blende (ZB) CdSe nanowire under uniaxial tensile deformation. We employed Stillinger-Weber (SW) potential to describe the inter-atomic interactions. The effect of variation of temperatures (100 K-600 K), sizes, and crystal orientation on the tensile response of the CdSe nanowires is investigated. Our simulation results suggest that both ultimate tensile strength and Young's modulus of CdSe have an inverse relationship with temperature. From 100K to 600K, the ZB CdSe exhibits brittle type failure thus there is no brittle to ductile transition temperature found. Results also suggest that size has a significant effect on the mechanical properties of CdSe nanowire. It has been found that as the cross-sectional area increases both ultimate tensile stress and Young's modulus increases as well. The [111] oriented ZB CdSe shows the largest ultimate tensile strength, Young's modulus and fracture toughness whereas the values are lowest for [100] orientation. The [110] orientation shows the largest failure strain compared to other orientations. Finally, failure mechanisms of CdSe nanowire are also investigated at 100K and 600K. We noticed that at 100K temperature [100] oriented ZB CdSe fails along {111} cleavage plane however in the case of 600 K temperature, both {111} and {100} planes are activated and cause fracture of CdSe nanowire at lower strain value. This study can guide to design ZB CdSe based solar cell, optoelectronic and semiconductor devices by presenting a comprehensive understanding of the mechanical and fracture characteristics of this nanowire.
Crystal Research and Technology, 2009
Axial heterostructure nanowires (NWs) of ZnTe/CdTe were grown by vapour-liquid-solid growth realized in a molecular beam epitaxial chamber. By alternative supply of Zn or Cd and constant Te the heterostructure was generated. The liquid phase is provided by a Au-based eutectic droplet which stays at the tip of the NW during the entire growth. For structural and chemical characterization by TEM the NWs were harvested from the substrate and transferred to a holey carbon film. The NWs exhibit an expansion of the diameter correlated with the interface region between ZnTe and CdTe. Idiomorphic growth of the CdTe is evident from electron diffraction experiments. The growth rate of CdTe appears to be smaller compared to that of ZnTe at the same temperature. Both, quantitative high-resolution TEM and energy dispersive X-ray spectroscopy line scans reveal a smeared ZnTe/CdTe interface along about 200 nm. The smearing is due to both, the liquid catalyst which buffers the supply of Cd instead of Zn at the liquid/solid interface and to the strain which is induced by the lattice mismatch. It forces the system to consume the remnant Zn for the NW growth in favour of Cd. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65 th birthday
Epitaxial growth of ZnSe and ZnSe/CdSe nanowires on ZnSe
physica status solidi (c), 2010
We report the molecular beam epitaxy (MBE) growth of ZnSe nanowires (NWs) on a ZnSe(100) epilayer assisted by gold catalyst. Gold dewetting assists in the formation of nanotrenches along the [0-1-1] direction in the ZnSe buffer layer. Nucleation of the gold catalyst in the trenches leads to the growth of NWs preferentially in directions orthogonal to the trenches. The wires adopt mostly the wurtzite type structure and grow along the caxis. CdSe quantum dots were inserted in the ZnSe NWs. The CdSe insertions systematically adopt a cubic zincblende arrangement with a [111] growth axis, as confirmed by transmission electron microscopy.
Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Physical Review Materials
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth rate is small and strongly temperature dependent, but a good control of the growth conditions allows the incorporation of quantum dots in nanowires with sharp interfaces and adjustable shape, and it minimizes the radial growth and the subsequent formation of additional CdTe clusters on the nanowire sidewalls, as confirmed by photoluminescence. Uncapped CdTe segments dissolve into the gold nanoparticle when interrupting the flux, giving rise to a bulb-like (pendant-droplet) shape attributed to the Kirkendall effect.
Defect studies of ZnSe nanowires
Nanotechnology, 2008
During the synthesis of ZnSe nanowires various point and extended defects can form, leading to observed stacking faults and twinning defects, and strong defect related emission in photoluminescence spectra. In this paper, we report on the development of a simple thermodynamic model for estimating the defect concentration in ZnSe nanowires grown under varying Se vapour pressure and for explaining the results of our experimental findings. Positron annihilation spectroscopy was used successfully for the first time for nanowires and the results support predictions from the defect model as well as agreeing well with our structural and optical characterization results. Under very high Se vapour pressure, Se nodules were observed to form on the sidewalls of the nanowire, indicating that beyond a limit, excess Se will begin to precipitate out of the liquid alloy droplet in the vapour-liquid-solid growth of nanowires.
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy
Nanotechnology, 2005
Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400-550 • C. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 • C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the catalyst film allows highly selective ZnSe deposition as probed by photoluminescence and Raman spectroscopy. In similar conditions, the addition of Cd vapour in the MBE reactor allows the synthesis of ZnCdSe ternary nanowires.
ZnSe/ZnCdSe heterostructure nanowires
Journal of Crystal Growth, 2010
The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.
Growth and Properties of ZnMnTe Nanowires
Acta Physica Polonica A, 2007
Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2 µm and that Mn 2+ ions were incorporated into substitutional sites of the ZnTe crystal lattice.