Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition
Yongchun Xin
Applied Physics Letters, 2006
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Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
Yongchun Xin
Applied Physics Letters, 2005
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Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers
Luke Lester
Applied Physics Letters, 2007
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Improved quantum dot stacking for intermediate band solar cells using strain compensation
Andrew G Norman
Nanotechnology, 2014
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Stress compensation by GaP monolayers for stacked InAs/GaAs quantum dots solar cells
Luisa Gonzalez
2008 33rd IEEE Photovolatic Specialists Conference, 2008
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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
Luisa Gonzalez
Applied Physics Letters, 2008
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Strain-interactions between InAs/GaAs quantum dot layers
Brian Abbey
Thin Solid Films, 2004
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Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
sasikala ganapathy
Applied Physics Letters, 2003
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Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure
Saurabh Upadhyay
Journal of Alloys and Compounds, 2018
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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
Mohamed Atef
2008
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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3��m emission
Bouraoui ILAHI
Applied Physics A: Materials Science & Processing, 2004
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Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures
Wagner Rodrigues
Nanotechnology, 2007
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InAs/GaAs multiple quantum dot structures grown by LP-MOVPE
J. Pangrac
Thin Solid Films, 2000
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Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots
Bouraoui ILAHI
Materials Science and Engineering: C, 2006
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Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates
Pedro Pablo González Borrero
Superlattices and Microstructures, 1998
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Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures
E. Grilli
Thin Solid Films, 2000
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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
Sasikala Ganapathy
Journal of Applied Physics, 2002
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Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing
Nilanjan Halder
Applied Physics A, 2011
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Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
manel souaf
Materials, 2015
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Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers
Ricardo Cisneros Tamayo
Superlattices and Microstructures, 2018
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Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures
Luca Seravalli
Journal of Applied Physics, 2007
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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures
Aditya Patel
Superlattices and Microstructures, 2013
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Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices
Tetsuya Asano
Journal of Applied Physics, 2010
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Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots
Brian Abbey
Journal of Applied Physics, 2004
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Multi-stacked InAs/GaAs quantum dot structures and their photovoltaic characteristics
Somsak Panyakeow
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Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers
sasikala ganapathy
Japanese Journal of Applied Physics, 2006
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