Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers (original) (raw)
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IEEE Journal of Selected Topics in Quantum Electronics, 2000
This study explores the relative intensity noise characteristics of quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The resonance frequency and eye diagram are presented. The linewidth enhancement factor (α factor) of QD VC-SEL is also investigated experimentally. The values of α factor were measured to be between 0.48 and 0.60. Moreover, a photonic RF phase shifter is examined using the QD VCSEL. A phase shifter with a total phase shift of 2π was demonstrated. These investigations and demonstrations will be useful in the field of QD VCSEL.
Opto-Electronics Review, 2011
We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (μ-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200–400 K. The simulation results show a decrease of 41 meV of QD ground state (GS) transition energy from 250–350 K. The changes of QDGS transition energy with different temperature indicate the possible detuning range for 1.3-μm wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain...
Micro-Optics, VCSELs, and Photonic Interconnects, 2004
We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mWrange output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140°C. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 -0.5 mW and 2.3 -0.6 mA, respectively, over a temperature interval of 10 -140°C. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.
Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers
Optical and Quantum Electronics - OPT QUANT ELECTRON, 2003
In the paper, the self-consistent optical–electrical–thermal-gain model of the oxide-confined long-wavelength 1.3-µm quantum-dot (InGa)As/GaAs diode laser is demonstrated. The model has been applied to analyse room-temperature (RT) threshold-operation characteristics of the advanced laser of this kind. It may be used to describe physics of the above arsenide-based diode lasers to better understand their threshold performance and finally to optimize their structures.
IEEE Photonics Technology Letters, 2000
This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.
Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters, 2000
We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL's with a large active area. We have fabricated an 11-m current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSEL's. In 8m aperture, single-mode operation was maintained with a driving current up to four times the threshold.