True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy (original) (raw)

Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes

Peter Kozodoy

Physica Status Solidi (a), 1999

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AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

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Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Steven Denbaars

Journal of Applied Physics, 2011

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Properties of InGaN blue laser diodes grown on bulk GaN substrates

P. Prystawko

Journal of Crystal Growth, 2005

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Misfit dislocation formation at heterointerfaces in (Al,ln)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

James Speck

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Low dislocation density, high power InGaN laser diodes

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MRS Internet Journal of Nitride Semiconductor Research, 2004

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High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

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AlGaN-Cladding-Free mmm-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

Steven Denbaars

Applied Physics Express, 2011

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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

chocho chocho

Applied Physics Letters, 1998

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Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Daniel Feezell, Matthew Hardy, Steven Denbaars

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Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

P. Prystawko

Semiconductor Lasers and Laser Dynamics II, 2006

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Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

Hirokuni Asamizu

Applied Physics Express, 2008

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Effect of n‐AlGaN cleave assistance layers on the morphology of c ‐plane cleaved facets for m ‐plane InGaN/GaN laser diodes

Steven Denbaars

physica status solidi c, 2011

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The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

Fabien Massabuau

physica status solidi (c), 2014

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Fabrication and properties of GaN-based lasers

S. Krukowski

Journal of Crystal Growth, 2008

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Growth of Crack-Free Thick AlGaN Layer and its Application to GaN-Based Laser Diode

Theeradetch Detchprohm

MRS Proceedings, 1999

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Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Đức Vũ đình

Journal of Applied Physics, 2016

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Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells

ChiaYen Huang

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Stress relaxation and critical thickness for misfit dislocation formation in (1010) and (3031) InGaN/GaN heteroepitaxy

Steven Denbaars

Applied Physics Letters, 2012

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Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate T

ChiaYen Huang

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Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

Steven Denbaars

Applied Physics Letters, 2012

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Misfit dislocations in In-rich InGaN/GaN quantum well structures

Colin J Humphreys

physica status solidi (a), 2006

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Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate

Arpan Chakraborty, James Speck

Applied Physics Express, 2009

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GaN based laser diodes–epitaxial growth and device fabrication

Roland Kröger

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Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

Yukari Ishikawa

Japanese Journal of Applied Physics, 2016

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Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Peter Lytvyn

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017

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Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

M. Den Hertog

Applied Physics Letters, 2002

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Low-dislocation-density GaN from a single growth on a textured substrate

Carol Ashby

Applied Physics Letters, 2000

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