Low loss, high contrast optical waveguides based on CMOS compatible LPCVD processing (original) (raw)
Related papers
2005
A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular cross-section silicon nitride (Si 3 N 4 ) filled with and encapsulated by silicon dioxide (SiO 2 ). The birefringence and minimal bend radius of the waveguide is completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries will be presented, showing excellent characteristics (channel attenuation ≤ 0.1 dB/cm, IL ≤ 1.5 dB, PDL ≤ 0.2 dB, B g ≤ 1×10 -4 , bend radius « 1 mm).
Low loss, high contrast planar optical waveguides based on low-cost CMOS compatible LPCVD processing
2008
A new class of integrated optical waveguide structures ("TriPleX") is presented, based on low cost CMOS-compatible LPCVD processing of alternating Si3N4 and SiO2 layers. The technology allows for medium and high index-contrast waveguides that exhibit low channel attenuation. In addition, TriPleX waveguides are suitable for operation at wavelengths from visible (< 500 nm) through the infra-red range (2 μm and beyond). The geometry is basically formed by a rectangular cross-section of silicon nitride (Si3N4) filled with and encapsulated by silicon dioxide (SiO2). The birefringence and minimal bend radius of the waveguide are completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries show excellent characteristics for telecom wavelengths at ~1300 nm-1600 nm (channel attenuation <= 0.06 dB/cm, Insertion Loss (IL) <= 0.15 dB, Polarization Dependent Loss (PDL) <= 0.1 dB, Group Birefringence (Bg) << 1×10-4, bend radius <= 50-100 μm).
Low loss, high contrast planar optical waveguides based on low-cost CMOS compatible LPCVD processing
Silicon Photonics and Photonic Integrated Circuits, 2008
A new class of integrated optical waveguide structures ("TriPleX") is presented, based on low cost CMOS-compatible LPCVD processing of alternating Si 3 N 4 and SiO 2 layers. The technology allows for medium and high index-contrast waveguides that exhibit low channel attenuation. In addition, TriPleX waveguides are suitable for operation at wavelengths from visible (< 500 nm) through the infra-red range (2 µm and beyond). The geometry is basically formed by a rectangular cross-section of silicon nitride (Si 3 N 4 ) filled with and encapsulated by silicon dioxide (SiO 2 ). The birefringence and minimal bend radius of the waveguide are completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries show excellent characteristics for telecom wavelengths at ~1300 nm-1600 nm (channel attenuation ≤ 0.06 dB/cm, Insertion Loss (IL) ≤ 0.15 dB, Polarization Dependent Loss (PDL) ≤ 0.1 dB, Group Birefringence (B g ) « 1×10 -4 , bend radius ≤ 50-100 µm).
Fabrication techniques for low-loss silicon nitride waveguides
Micromachining Technology for Micro-Optics and Nano-Optics III, 2005
Optical waveguide propagation loss due to sidewall roughness, material impurity and inhomogeneity has been the focus of many studies in fabricating planar lightwave circuits (PLC's) 1,2,3 In this work, experiments were carried out to identify the best fabrication process for reducing propagation loss in single mode waveguides comprised of silicon nitride core and silicon dioxide cladding material. Sidewall roughness measurements were taken during the fabrication of waveguide devices for various processing conditions. Several fabrication techniques were explored to reduce the sidewall roughness and absorption in the waveguides. Improvements in waveguide quality were established by direct measurement of waveguide propagation loss. The lowest linear waveguide loss measured in these buried channel waveguides was 0.1 dB/cm at a wavelength of 1550 nm. This low propagation loss along with the large refractive index contrast between silicon nitride and silicon dioxide enables high density integration of photonic devices and small PLC's for a variety of applications in photonic sensing and communications.
Design and fabrication of SiO/sub 2//Si/sub 3/N/sub 4/ CVD optical waveguides
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, 1999
In this paper the design and fabrication of siliconbased optical waveguides are revisited. The goal was to develop a novel deposition process to minimize leakage losses, by allowing the deposition of a thick Si02 lower cladding as an optical buffer layer. Indeed, comparison between theory and expqrimental data suggests that for the fabricated waveguides the dominant loss mechanism is scattering caused by side-walls surface roughness. Optical characterization yielded losses in the saqe range of state-of-art devices reported in the literature.
Design, fabrication, structural and optical characterization of thin Si3N4 waveguides
2004
LPCVD (low pressure chemical vapor deposition) thin film Si 3 N 4 waveguides have been fabricated on Si substrate within a CMOS (complementary metal-oxidesemiconductor) fabrication pilot-line. Rib, channel, and striploaded waveguides have been designed, fabricated and characterized in order to workout the best structure. Number and optical confinement factors of guided optical modes have been simulated taking into account sidewall effects caused by the etching processes, which have been studied by Scanning Electron Microscopy. Optical guided modes have been observed with a mode analyzer and compared with simulation expectation to confirm the process parameters. Propagation loss measurements at 780 nm have been performed by using both the cut-back technique and measuring the drop of intensity of the top scattered light along the length of the waveguide. Loss coefficients of about 0.1 dB/cm have been obtained for channel waveguides. These data are very promising in view of the development of Si integrated photonics.
Silicon-on-nitride waveguides for mid- and near-infrared integrated photonics
Applied Physics Letters, 2013
Silicon-on-nitride ridge waveguides are demonstrated and characterized at mid-and near-infrared optical wavelengths. Silicon-on-nitride thin films were achieved by bonding a silicon handling die to a silicon-on-insulator die coated with a low-stress silicon nitride layer. Subsequent removal of the silicon-on-insulator substrate results in a thin film of silicon on a nitride bottom cladding, readily available for waveguide fabrication. At the mid-infrared wavelength of 3.39 lm, the fabricated waveguides have a propagation loss of 5.2 6 0.6 dB/cm and 5.1 6 0.6 dB/cm for the transverse-electric and transverse-magnetic modes, respectively. V C 2013 American Institute of Physics. [http://dx.
Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits
IEEE Access, 2020
Silicon photonic devices used in the photonics industry over the past three decades have helped in realizing large-scale photonic integrated circuits. Silicon nitride (Si 3 N 4) is another CMOS-compatible platform that provides several advantages such as low loss, high optical power tolerance, and broad spectral operation band from visible to infrared wavelengths. Recently, the combination of Si 3 N 4 waveguide technology with silicon photonics and III-V materials has opened up new areas in on-chip applications. Researchers in the field are primarily focusing on its applications such as on-chip gas sensing, nonlinear optical signal processing, and label-free biosensors based on photonic integrated circuits. In this review paper, we discuss Si 3 N 4 material-based platforms for a variety of applications with devices ranging from passive to active and hybrid photonic devices. INDEX TERMS Grating coupler, microring resonator, photonic integrated circuits, silicon nitride.