Intersubband transitions for single, double and triple Si  -doped GaAs layers (original) (raw)

The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer

ismail sokmen

Solid State Communications, 2003

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Intersubband optical absorption of double Si δ-doped GaAs

ismail sokmen

2004

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Nonlinear intersubband optical absorption of Si δ‐doped GaAs under an electric field

Hasan Yıldırım

physica status solidi (b), 2006

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Nonlinear intersubband optical absorption of Si -doped GaAs under an electric field

Hasan Yıldırım

Physica Status Solidi B-basic Solid State Physics, 2006

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Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

Hassen Dakhlaoui

Optics and Photonics Journal, 2012

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Nonlinear optical properties related to intersubband transitions in asymmetrical double δ-doped GaAs; Effects of an applied electric field

Miguel Mora

2013

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Continuous to bound interband transitions in delta-doped GaAs layers

Pierre Basmaji

Superlattices and Microstructures, 1990

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Effects of Si Incorporation and Electrical Activation on Intersubband Optical Absorption in MBE-grown GaAs/AlGaAs Multiple Quantum Well Structures

Peter Hiesinger

MRS Proceedings, 1989

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Intersubband spectroscopy in GaAs/GaAlAs multi-quantum-well structures: Photoinduced absorption

J Bajaj

Superlattices and Microstructures, 1989

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Optical Intersubband Transitions in Si Based Nanostructures

Diego Krapf

2003

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Photoinduced intersubband absorption in n-doped quantum wells

Yuval Garini

Surface Science

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Electronic subband of single Siδ-doped GaAs structures

ismail sokmen

Superlattices and Microstructures, 2000

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The triple Si ? -doped GaAs structure

ismail sokmen

Applied Physics A, 2005

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Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells

Yuval Garini

Surface Science, 1992

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Electronic properties of two coupled Si δ -doped GaAs structures

ismail sokmen

The European Physical Journal Applied Physics, 2003

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Low Temperature Infrared Measurements and Photo-Induced Persistent Changes of Intersubband Transitions in GaAs/AlGaAs Multiple Quantum Wells

Peter Hiesinger

MRS Proceedings, 1990

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The effect of the donor distribution on the electronic structure of two coupled Si δ-doped layers in GaAs

ismail sokmen

Physica B: Condensed Matter, 2003

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Influence of an applied electric field on the electronic properties of Si δ -doped GaAs

ismail sokmen

The European Physical Journal Applied Physics, 2003

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Nonequilibrium luminescence at theE0+Δ0gap in GaAs with Si‐δ doping

Francisco Meseguer

Journal of Applied Physics, 1992

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Electronic properties of Si δ-doped GaAs under an applied electric field

hüseyin sarı

Semiconductor Science and Technology, 2001

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Intersubband absorption performed on p-type modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrate

J. Faist

Applied Physics Letters, 2002

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Self-consistent analysis of electric field effects on Si delta-doped GaAs

Angel Sánchez

1995

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Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

L. Diehl, Jerome Faist

Applied Physics Letters - APPL PHYS LETT, 2002

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Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells

Omar Manasreh

Physical Review B, 1991

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Properties of Si δ-layers embedded in GaAs

B. Sernelius

Physica E: Low-dimensional Systems and Nanostructures, 1998

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Si δ-layers embedded in GaAs

B. Sernelius

Applied Physics Letters, 1998

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Absorption and emission spectroscopy of intersubband transitions in Si[sub 1−x]Ge[sub x]/Si quantum wells

Jean-michel Lourtioz

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998

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Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

O. Malis

Journal of Applied Physics, 2013

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Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures

Kei Lau

Journal of Electronic Materials, 2000

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Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions

Artavazd Kostanyan

Journal of Physics: …, 2007

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Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

Vladimir Aleshkin

Nanotechnology, 2000

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Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs

Muhammet YILDIRIM

2002

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Influence of temperature on the electronic properties of Si δ -doped GaAs structures

ismail sokmen

The European Physical Journal Applied Physics, 2003

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The self-consistent calculation of Si δ-doped GaAs structures

ismail sokmen

Applied Physics A: Materials Science & Processing, 2001

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Intersubband energies in GaAs-Ga1-xAlxAs heterojunctions

Andreas Wieck

Physical review. B, Condensed matter, 1987

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