Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy (original) (raw)

In situ scanning tunneling microscopy of InAs quantum dots on GaAs() during molecular beam epitaxial growth

Markus Pristovsek

Surface Science, 2003

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Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

Gerhard Klimeck

Physical Review B, 2004

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Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

divine kumah

Applied Physics Letters, 2011

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Intermixing and shape changes during the formation of InAs self-assembled quantum dots

Jorge garcia

Applied Physics Letters, 1997

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Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy

Markus Ternes

Journal of Crystal Growth, 2003

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Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Richard Noetzel

Applied Physics Letters, 2005

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Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

Sanguan Anantathanasarn

Applied Physics Letters, 2008

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Wetting layer evolution in InAs/GaAs() heteroepitaxy: effects of surface reconstruction and strain

Paul Joyce

Surface Science, 2002

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Site-controlled self-assembled InAs quantum dots grown on GaAs substrates

Jen-inn Chyi

Nanotechnology, 2010

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Modification of InAs quantum dot structure by the growth of the capping layer

Guoda Lian

Applied Physics Letters, 1998

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Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy

Sandeep Gaan

Journal of Applied Physics, 2010

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Self-aggregation of quantum dots for very thin InAs layers grown on GaAs

Faustino Martelli

Physical review. B, Condensed matter, 1996

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In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs

Serge Oktyabrsky

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005

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Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

Joachim Hermann Wolter

Applied Physics Letters, 2003

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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

Kah Pin Chen

Journal of Crystal Growth, 2011

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Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

jose ulloa

Applied Physics Letters, 2009

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Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces

E. Grilli

1997

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GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques

K. Haberland

Journal of Crystal Growth, 1998

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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

J. Hendrickson, G. Khitrova

Journal of Crystal Growth, 2011

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Effects of annealing on self-assembled InAs quantum dots and wetting layer in GaAs matrix

Adam Babiński

Lawrence Berkeley National Laboratory, 2001

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Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

Pedro Pablo González Borrero

Journal of Crystal Growth, 2002

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Selective area growth of InAs quantum dots formed on a patterned GaAs substrate

Yongchun Xin

Applied Physics Letters, 2004

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Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Philomela Komninou

Applied Surface Science, 2014

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Growth and characterization of InAs quantum dots on Si(001) substrates

Ryne Raffaelle

Journal of Crystal Growth, 2004

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STM topographic and barrier imaging of self-assembled InAs/GaAs dots

Stefano Selci

Materials Science and Engineering: B, 2002

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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment

Armando Rastelli

Physical Review B, 2006

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Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)

Itaru Kamiya

Journal of Crystal Growth, 2011

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Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface

Harry Ruda

Journal of Applied Physics, 2006

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A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

Miriam Herrera

Applied Physics A, 2008

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Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots

Brian Abbey

Journal of Applied Physics, 2004

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Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

manel souaf

Materials, 2015

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