The Effect of Temperature on the Optical Absorption Edge of Amorphous Thin Films of Silicon Monoxide (original) (raw)
(a), C. A. HOGARTH (a), and D. N. WATERS (b) The analysis of the optical absorption edge as a function of temperature is discussed with particular reference to amorphous silicon monoxide films. The validity of the Urbach rule is investigated and the respective parameters are estimated. Experimental measurements on thin SiO films of the optical energy gap as the temperature is varied in the range 100 to 474 K, are reported and the results are discussed in terms of current theory. L'analyse de 1'6nergie caracteristique Eopt du seuil d'absorption est consideree avec reference speciale aux couches minces de monoxyde de silicium. La validite de la loi d'Urbach est examinee et les parametres de ce processus sont determinees. Les resultats experimentaux pour les couches minces de SiO montrent que quand la temperature augmente dans la region 100 it 474 K les valeurs de Eopt croissent et ce resultat gen6ral est discute.
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