Structural and electronic properties of doped aSi(1-x)Ge(x): H alloys grown with H-solution (original) (raw)

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Structural and electronic properties of doped aSi(1-x)Ge(x): H alloys grown with H-solution

1989

Jörg WindJörg Wind

Abstract

Journal of Non-Crystalline Solids 114 (1989) 531-533 531 North-Holland STRUCTURAL AND ELECTRONIC PROPERTIES OF DOPED a-Si1_xGex :H ALLOYS GROWN WITH H-DILUTION J6rg WIND*, Gerhard KROTZ, Vesselinka PETROVA-KOCH*, Gerhard MOLLER AND ...

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