Influence of indium segregation on the emission from InGaAs/GaAs quantum wells (original) (raw)

Applied Physics Letters, 1995

Haiping YU

Abstract

Growth of high quality As/GaAs quantum wells (QWs) is crucial to the fabrication of strained layer lasers as pump sources for Er-doped fiber amplifiers and modulators operating in the 920–980 nm region. For these applications, the In fraction, x, must be less than 0.25; otherwise, ...

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