Quantum Dot Behavior in Bilayer Graphene Nanoribbons (original) (raw)
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Electron transport in edge-disordered graphene nanoribbons Year : 2011 Version : Final
2015
Rights: © 2011 American Physical Society (APS). This is the accepted version of the following article: Saloriutta, Karri & Hancock, Y. & Kärkkäinen, Asta & Kärkkäinen, Leo & Puska, Martti J. & Jauho, Antti-Pekka. 2011. Electron transport in edge-disordered graphene nanoribbons. Physical Review B. Volume 83, Issue 20. 205125/1-6. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.83.205125, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.205125.
Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
Physical Review Letters, 2009
We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the π − π * plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zigzag ribbons. These unconventional doping effects could be used to design novel types of switching devices.