Effect of Deposition Conditions on Oxide Parameters of Silicon (original) (raw)
Structural and Electrical Changes in Polycrystalline Silicon Thin Films That Are Heavily In Situ Boron-Doped and Thermally Oxidized with Dry Oxygen
Boubekeur BIROUK
Chemical Vapor Deposition, 1997
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Characterization of sub-micrometre silicon films (Si-LPCVD) heavilyin situboron-doped and submitted to treatments of dry oxidation
F. Djahli
Semiconductor Science and Technology, 2002
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Effects of boron concentration upon oxygen precipitation in CZ silicon
Vivian Stojanoff
Journal of Crystal Growth, 1987
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Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition
Jose cali
Journal of Applied Physics, 1994
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Microstructure of boron-doped silicon layers prepared by low pressure chemical vapour deposition
Georges LANDA
Thin Solid Films, 1987
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Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates
Julien Voillot
Physica Status Solidi A-applications and Materials Science, 2016
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Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon
Akinwumi Amusan
Microelectronic Engineering, 2013
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Anomalous doping behavior of in situ boron-doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition
Chih-yeh Chao
Applied Physics Letters, 1993
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Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD
Kuan Chiu
Applied Mechanics and Materials, 2012
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Atomic-scale redistribution of dopants in polycrystalline silicon layers
D. Mathiot
Journal of Applied Physics, 2010
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Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion
Christian Gontrand
Microelectronics Journal, 1994
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Study of redistribution and activation of boron implanted into nitrogen doped silicon thin films
ramdane Mahamdi
2007
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Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride
Brigitte Caussat
2004
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Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique
Abul Hossion
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Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
Cristiano Krug
Applied Physics Letters, 1999
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Implantation damage and anomalous diffusion of implanted boron in silicon through SiO2 films
Christian Gontrand
Physica Status Solidi (a), 1993
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Diffusion of near surface defects during the thermal oxidation of silicon
P. André
Journal of Applied Physics, 1997
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Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2
Cristiano Krug
Journal of Applied Physics, 1998
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Diffusion and characterization of doped patterns in silicon from prepatterned boron- and phosphorus-doped silicate glasses
Jochen Rentsch
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Boron diffusion in silicon in inert and oxidizing ambient and extrinsic conditions
Dimitris Tsoukalas
Physica Status Solidi (a), 1987
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Analysis of phosphorus-doped silicon oxide layers deposited by means of PECVD as a dopant source in diffusion processes
Jochen Rentsch
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Boron Diffusion in Silicon-on-Insulator Structures Formed by Oxygen Implantation
Pascal Normand
Journal of The Electrochemical Society, 1990
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Substrate type effect on boron doped polysilicon films properties
Boubekeur BIROUK
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Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
K. Furić, Enrico Moser, Alessandro Chiasera
Croatica Chemica Acta, 2012
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Influence of grains and surface roughness in boron and phosphorus implanted LPCVD polycrystalline silicon thin film
Jamil Akhtar
Microsystem Technologies, 2014
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Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers
Rita Tonini
Applied Physics A Solids and Surfaces, 1991
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Diffusion of boron in silicon during post‐implantation annealing
F. Baruffaldi
Journal of Applied Physics, 1991
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Signature of growth deposition technique on the properties of PECVD and thermal SiO2
Jamil Akhtar
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Diffusion of Boron in Polycrystalline Silicon
D. Mathiot
Journal of Socio-economics, 1996
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Passivation of Boron-Doped Industrial Silicon Emitters by Thermal Atomic Layer Deposited Titanium Oxide
Charanjit Bhatia
IEEE Journal of Photovoltaics, 2015
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