Germanium nMOSFETs with GeO2 Passivation and n+/p Junctions Formed by Spin-On Dopants (original) (raw)

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012

Abstract

Germanium is an attractive channel material for future CMOS scaling because of its higher electron (~2x) and hole (~4x) mobilities compared to Si. While high-performance Ge pFETs have been consistently demonstrated, Ge nFETs continue to show empirical electron mobilities inferior to that of Si. Two of the presumed culprits for this behavior are the high density of interface states (Dit)

Mustafa Jamil hasn't uploaded this paper.

Let Mustafa know you want this paper to be uploaded.

Ask for this paper to be uploaded.