Materials challenges for quantum technologies based on color centers in diamond (original) (raw)
Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review L. V. H. Rodgers Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA E-mail: lvhr@princeton.edu L. B. Hughes Materials Department,...
Sign up for access to the world's latest research.
checkGet notified about relevant papers
checkSave papers to use in your research
checkJoin the discussion with peers
checkTrack your impact
Related papers
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
We present a procedure that makes use of group theory to analyze and predict the main properties of the negatively charged nitrogen-vacancy (NV) center in diamond. We focus on the relatively low temperatures limit where both the spin-spin and spin-orbit effects are important to consider. We demonstrate that group theory may be used to clarify several aspects of the NV structure, such as ordering of the singlets in the (e 2 ) electronic configuration, the spin-spin and the spin-orbit interactions in the (ae) electronic configuration. We also discuss how the optical selection rules and the response of the center to electric field can be used for spin-photon entanglement schemes. Our general formalism is applicable to a broad class of local defects in solids. The present results have important implications for applications in quantum information science and nanomagnetometry.
Physical Review Letters, 2009
We report a study of the 3 E excited-state structure of single negatively-charged nitrogen-vacancy (NV) defects in diamond, combining resonant excitation at cryogenic temperatures and optically detected magnetic resonance. A theoretical model is developed and shows excellent agreement with experimental observations. Besides, we show that the two orbital branches associated with the 3 E excited-state are averaged when operating at room temperature. This study leads to an improved physical understanding of the NV defect electronic structure, which is invaluable for the development of diamond-based quantum information processing.
Quantum Control for Nanoscale Spectroscopy With Diamond Nitrogen-Vacancy Centers: A Short Review
Frontiers in Physics
Diamond quantum technologies based on color centers have rapidly emerged in the most recent years. The nitrogen-vacancy (NV) color center has attracted a particular interest, thanks to its outstanding spin properties and optical addressability. The NV center has been used to realize innovative multimode quantum-enhanced sensors that offer an unprecedented combination of high sensitivity and spatial resolution at room temperature. The technological progress and the widening of potential sensing applications have induced an increasing demand for performance advances of NV quantum sensors. Quantum control plays a key role in responding to this demand. This short review affords an overview on recent advances in quantum control-assisted quantum sensing and spectroscopy of magnetic fields.
Chemical control of the charge state of nitrogen-vacancy centers in diamond
Physical Review B, 2011
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV − centers convert into NV 0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV − in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogenvacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode.
Low temperature studies of the excited-state structure of Nitrogen-Vacancy color centers in diamond
2009
We report a study of the 3E excited-state structure of single nitrogen-vacancy (NV) defects in diamond, combining resonant excitation at cryogenic temperatures and optically detected magnetic resonance. A theoretical model of the excited-state structure is developed and shows excellent agreement with experimental observations. Besides, we show that the two orbital branches associated with the 3E excited-state are averaged when operating at room temperature. This study leads to an improved physical understanding of the NV defect electronic structure, which is invaluable for the development of diamond-based quantum information processing.
Loading Preview
Sorry, preview is currently unavailable. You can download the paper by clicking the button above.