S-band power GaAs field-effect transistors (original) (raw)

1975

Abstract

This paper reports the progress that has been made in the development of large periphery S-band GaAs Schottky barrier field-effect transistors using two different fabrication techniques. One process relies on the conventional photolithographic alignment of a gate electrode inside a source-drain spacing. The other method is a self-aligned technique which involves plating both the drain and source metal contacts to control the gate length. The transistors fabricated using these techniques are referred to as RAGFET (Realigned-Gate-FET) and SAGFET (Selfaligned-Gate-FET) devices, respectively.

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