Chapter 1 High-Purity LEC Growth and Direct Implantation of GaAs for Monolithic Microwave Circuits (original) (raw)

Semiconductors and Semimetals, 1984

Abstract

Publisher Summary This chapter discusses the establishment of a reproducible gallium arsenide (GaAs) materials base to realize the full potential of direct ion implantation as a reliable, cost-effective fabrication technology of high-performance GaAs metal–semiconductor field effect transistor (MESFET) devices and integrated circuits (IC). The considerable efforts directed at improving basic GaAs materials and processes result from the strong interdependence of high-frequency GaAs circuit performance upon substrate quality. Many of the conventional wafer preparation techniques used today in silicon have been applied on a laboratory scale to large liquid-encapsulated Czochralski (LEC)-grown GaAs crystals. The low-breakage processing of GaAs demands the development of special handling techniques based on the automated cassette and wafer transport methods that are being utilized in silicon IC manufacturing.

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