Optical-microwave interactions in semiconductor devices. Quarterly report no. 3, 1 Jan-31 Mar 1979 (original) (raw)

1979

Abstract

The results of an extensive experimental study of mode locking in semiconductor lasers with different external-cavity configurations are described. The generation of GaAs laser pulses less than 200 psec wide at approximately-GHz repetition rates was achieved by operating the laser in a 5-cm-long external cavity. The presence of a strong resonance at low frequencies in the laser actually aided the generation of short pulses. A novel external-cavity configuration using a piece of optical fiber is also described. Modulation frequencies as high as 4.26 GHz were obtained for lasers biased only slightly above threshold, and optical pulses as narrow as 200 psec were generated using this technique. A theoretical study of the response of GaAs FETs under optical illumination was presented. For a strong photo-transistor effect to occur in an FET requires that the region of active channel under the gate electrode be illuminated. A modified FET design suitable for this purpose is proposed and analyzed.

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