Atomic assembly during GaN film growth: Molecular dynamics simulations (original) (raw)
Molecular dynamics simulations using a recently developed Ga-N Tersoff type bond order interatomic potential have been used to investigate the growth mechanisms of ͑0001͒ wurtzite GaN films from thermalized atomic gallium and nitrogen fluxes. The crystallinity and stoichiometry of the deposited wurtzite lattice structures were determined as a function of growth temperature and N:Ga flux ratio. The lattice perfection was found to improve as the growth temperature was increased to 500 K. At a fixed growth temperature, the lattice quality and stoichiometry both reached optimum as the N:Ga ratio approached a value between two and three. The optimum flux ratio increased with increasing growth temperature. These three observations are consistent with experimental studies of growth on wurtzite phase promoting substrates. The atomic assembly mechanisms responsible for these effects have been explored using time-resolved atom position images. The analysis revealed that high quality crystalline growth only occurred when off-lattice atoms ͑which are usually associated with amorphous embryos or defect complexes͒ formed during deposition were able to move to unoccupied lattice sites by thermally activated diffusion processes. The need for a high N:Ga flux ratio to synthesize stochiometric films arises because many of the nitrogen adatoms that impact N-rich ͑0001͒ GaN surfaces are re-evaporated. Reductions of the substrate temperature reduce this reevaporation and as a result, the optimum N:Ga ratio for the stoichiometric film formation ͑and best lattice perfection͒ was reduced as the growth temperature was decreased.
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