Minority Carrier Lifetime in Furnace and E-Beam Annealed CZ Silicon (original) (raw)

Journal of The Electrochemical Society, 1987

Abstract

Thermally induced defects in CZ silicon are studied, with the aim of identifying the mechanisms responsible for lifetime changes and the role of oxygen in them. For low temperature heatings lifetime can either decrease or increase: a gettering activity of neutral oxygen clusters which participate in the dissociation equilibria of Fe-B pairs is postulated. The effects of pretreatments performed by

G. Lulli hasn't uploaded this paper.

Let G. know you want this paper to be uploaded.

Ask for this paper to be uploaded.