Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization (original) (raw)

Metrology, Inspection, and Process Control for Microlithography XXIII, 2009

Abstract

ABSTRACT We report on a performance-based measurement (PBM) technique from a volume production 65-nm multi-product wafer (MPW) process that shows far more sensitivity than the standard physical gate-length (CD) measurements. The performance (the electrical "effective" gate length, Leff) variation results measured by PBM can NOT be explained alone by CD (physical gate) measurement and show that the non-destructive (non-contact) PBM is able to monitor and control at first-level of electrical connectivity (>= M1), the bin-yield determining in-die variation that are NOT captured or realized by physical CD measurement. Along with this higher sensitivity, we also show that the process-induced variation (excursion) has a distinct signature versus "nominal" expected behavior.

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