Silicon Diode as an Alpha Particle Detector and Spectrometer for Direct Field Measurements (original) (raw)

2016, Radiation Protection Dosimetry

A miniature windowless silicon (Si) diode (4 mm 2) was evaluated as alpha particle detector and spectrometer for field measurements. Such detector would be useful in radiation surveys following nuclear or radiological events that involve contaminated individuals and surfaces with alpha-emitting radionuclides. The detector was irradiated with alpha particles from a 241 Am (2.3 kBq) and a 210 Po (9 kBq) source at source-detector distances (SDD) of 0.5, 1.0, and 1.8 cm. Measurements obtained under normal air pressure and temperature showed that the Si diode is useful for energy-resolved measurements of alpha particles under these conditions. For the Si diode, the energy resolution in terms of full width at half maximum (FWHM) was 281 keV, 148 keV, and 113 keV for the SSD of 0.5, 1.0, and 1.8 cm, respectively. The minimum detectable activity increased from 0.08 Bq to 0.83 Bq when the SDD increased from 0.5 to 1.8 cm for the Si diode.

Scanning of irradiated silicon detectors using alpha particles and low-energy protons

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection eciency was determined as a function of uence.

Characterization and Calibration of Ion-Implanted-Silicon Detector for Alpha Particles Measurement

2010

Ion implanted - silicon detectors are widely used in the alpha radiation, especially for quantitative analysis in environmental applications. For quantitative measurements of the alpha radiation, their characterization and electronic calibration is required. We have tested the silicon detector and CSA (Charge sensitive amplifier) at the room temperature with test setup, using a Am-241 source with a characteristic energy of 5.485 MeV. The purpose of these experiments was to calibrate and characterize the response of the radon system to charged particle of the same types and energies as those encountered in soil. To meet these requirements, discriminating with pulse width of 400 ns is adjusted. The experimental count results demonstrated that this system can be used in online radon measurements.

EFFECT OF ALPHA IRRADIATION ON SILICON SCHOTTKY DIODE DETECTOR

This paper gives a brief overview of Semiconductor Schottky diode detector in response to α-particle irradiation. As α-particle are difficult to detect so we need a high resolution device for its detection. In this paper we have simulated a model of Si Schottky diode detector in Sentaurus TCAD Software. TCAD (Technology Computer Aided Design) simulation is a boon for the semiconductor devices. Using this tool we can simulate and design semiconductor devices and can generate simulation model to get the best optimum simulation results for semiconductor diode. Sentaurus TCAD supports wide range of semiconductor technologies from conventional to compound semiconductor detector. α-particles induced transient current pulse measurement were carried out on Si Schottky diode at (1) different temperature, (2) different energies of the incident α-particle and (3) different reverse bias of Schottky diode. Effect of temperature, incident α-particle and reverse bias on the generated α-induced transient current pulse were analyzed.

Thin-film silicon detectors for particle detection

physica status solidi (c), 2004

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 µm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been characterized using light pulse illumination and beta particle irradiation from 63 Ni and 90 Sr sources. Direct detection of single lowand high-energy beta particles have been demonstrated. The application of this new integrated particle sensor concept for medical imaging is also discussed.

Evaluation of commercial silicon diode for electron dosimetry

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007

Ionization chambers have been widely used as the reference detector for measurements of photon and electron beams. However, advances in silicon planar technology have allowed the use of silicon diodes in spectrometry and dosimetry of radiations. The aim of this study is to evaluate the response of a PIN silicon diode for electron dosimetry. The diode selected for this study is a planar-processed silicon diode XRA-50. Its active area is 25 mm 2 and it is characterized by a low leakage current and a low terminal capacitance of 14 pF for reverse voltage of 30 V. The results showed a linear dose response of the diode for 4, 9, and 15 MV electron beam energies, with a determined coefficient of 0.99997. The results of the depth dose curves measured with the diode showed a good agreement with the ones obtained with the ionization chamber. The difference is lower than 2%. These results demonstrate that the XRA-50 is suitable for electron dosimetry. r

ELECTRICAL CHARACTERISTICS AND ALPHA PARTICLE DETECTION PERFORMANCE OF A NEWLY DEVELOPED PIN PHOTODIODE

The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be-20 nA and 23pF, respectively, at-20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.

MEASUREMENT OF ENERGY LOSS OF LIGHT IONS USING SILICON SURFACE BARRIER DETECTOR

The Energy Loss (ΔE) of light ions such as alpha particles of energy 5.48 MeV have been measured in atmospheric gas at different pressures. The energy loss experiment has performed using alpha ray spectrometer. The source of Am-241 that emits alpha particles of He ions of energy 5.48 MeV. The passivated ion-implanted planar Silicon Surface Barrier Detector [SSBD] of resolution 20 KeV in vacuum for 5.48 MeV energy. The Alpha Spectrometer constitutes the Multi-Channel Analyzer (MCA-1K) connected with Alpha Ray Spectroscopy Software (ALSS), Power Supply (NIM BIN) and Vacuum Pump. The measured energy loss [ΔE] in the vacuum at 4.2 mbar was 9.64 KeV and that in without vacuum the energy loss [ΔE] was 4.005 MeV. The range of alpha particles in atmospheric gas at different pressures is obtained through the measurement of transmitted energy.

Technical Note: Characterization of the new microSilicon diode detector

Medical Physics

Purpose: Dosimetric properties of the new microSilicon diode detector (60023) have been studied with focus on application in small-field dosimetry. The influences of the dimensions of the sensitive volume and the density of the epoxy layer surrounding the silicon chip of microSilicon have been quantified and compared to its predecessor (Diode E 60017) and the microDiamond (60019, all PTW-Freiburg, Germany). Methods: Dose linearity has been studied in the range from 0.01 to 8.55 Gy and dose-per-pulse dependence from 0.13 to 0.86 mGy/pulse. The effective point of measurement (EPOM) was determined by comparing measured percentage depth dose curves with a reference curve (Roos chamber). Output ratios were measured for nominal field sizes from 0.5 9 0.5 cm 2 to 4 9 4 cm 2. The corresponding small-field output correction factors, k, were derived with a plastic scintillation detector as reference. The lateral dose-response function, K(x), was determined using a slit beam geometry. Results: MicroSilicon shows linear dose response (R 2 = 1.000) in both low and high dose range up to 8.55 Gy with deviations of only up to 1% within the dose-per-pulse values investigated. The EPOM was found to lie (0.7 AE 0.2) mm below the front detector's surface. The derived k for microSilicon (0.960 at s eff = 0.55 cm) is similar to that of microDiamond (0.956), while Diode E requires larger corrections (0.929). This improved behavior of microSilicon in small-fields is reflected in the slightly wider K(x) compared to Diode E. Furthermore, the amplitude of the negative values in K(x) at the borders of the sensitive volume has been reduced. Conclusions: Compared to its predecessor, microSilicon shows improved dosimetric behavior with higher sensitivity and smaller dose-per-pulse dependence. Profile measurements demonstrated that microSilicon causes less perturbation in off-axis measurements. It is especially suitable for the applications in small-field output factors and profile measurements.

High sensitivity alpha-particle and electron spectroscopy

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 1986

Thin massless sources of 238pu and 249Cf, prepared in an electromagnetic isotope separator, have been used to determine the characteristics of newly developed passivated ion implanted silicon detectors. These detectors are found to be superior to the usual Au Si surface barrier detectors, both in resolution and peak tailing. For 238pu c~-groups we have measured a resolution (fwhm) of (9.2+0.2) keV and find the tail to be 1.0×10 ~ of the peak height. This tailing is more than an order of magnitude better than that obtained with the best surface barrier detectors. Relative intensities of 2~'~Cf c~-groups have also been measured with high precision.

COTS Silicon diodes as radiation detectors in proton and heavy charged particle radiotherapy 1

Radiation and Environmental Biophysics, 2010

Modern radiotherapy facilities for cancer treatment such as the Heavy Ion Therapy Center (HIT) in Heidelberg, Germany, allow for sub-millimeter precision in dose deposition. For measurement of such dose distributions and characterization of the particle beams, detectors with high spatial resolution are necessary. Here, a detector based on the commercially available COTS photodiode (BPW-34) is presented. When applied in hadronic beams of protons and carbon ions, the detector reproduces dose distribution well, but its response decreases rapidly by radiation damage. However, for MeV photon beams, the detector exhibits a similar behavior as found in diode detectors usually applied in radiotherapy. This manuscript is based on a contribution given at the

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