6.5% Certified Efficiency Sb2Se3 Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer (original) (raw)
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Sb 2 (Se 1‐x S x ) 3 Thin‐Film Solar Cells Fabricated by Single‐Source Vapor Transport Deposition
Solar RRL, 2019
The properties of Sb 2 (Se 1-x S x) 3 alloy films can be continuously tuned by changing its composition, enabling potentially better device efficiency compared to the Sb 2 S 3 or Sb 2 Se 3 counterparts. Fabrication of Sb 2 (Se 1Àx S x) 3 films with good uniformity and orientation are prerequisites to realize their full potential. Here, pure-phase and high-uniformity Sb 2 (Se 1-x S x) 3 absorbers are successfully produced via a vapor transport deposition method employing a single evaporation source. Increasing the travelling distance of vapor particles can improve the morphology and crystallinity of Sb 2 (Se 1-x S x) 3 films, and as a result, compact Sb 2 (Se 1-x S x) 3 films with strong preferential [221] orientation and uniform composition throughout the whole film are obtained. Further, the CdS surface is treated with H 2 O 2 solution and a device with a champion efficiency of 6.30% is obtained, a new efficiency record for Sb 2 (Se 1-x S x) 3 based thin-film solar cells without a hole-transporting layer.
New Sb 2 Se 3 based solar cell for achieving high efficiency -Theoretical modeling
In this paper, we presented a numerical study of a CdS/Sb2Se3 mono junction solar cell (SC) using the SC Capacitive Simulator (SCAPS-1D). We validated an experimental work using a variety of Sb2Se3 experimental parameters, and the results showed excellent agreement between numerical and experimental J-V curves, yielding a PCE of 7.54% .To continue, we analyzed the impact of Sb2Se3 thin layer thickness, charge carrier concentration, bulk defect density, and interface defect (CdS/Sb2Se3) on solar cell characteristics. With the optimum Sb2Se3 layer thickness of 1.2 m, carrier concentration of 10 15 cm-3 , bulk defect of 10 13 cm-3 , and CdS/Sb2Se3 interface defect densities of 10 10 cm-2 , we were able to attain an efficiency of 16.62%, Jsc = 35.38 mA/cm 2 , Voc = 0.66 V, and FF = 70.33%. Finally, we investigated the insertion effect of n-GaAs (ETL) and P +-CuO HTL (BSF) on Sb2Se3 solar cell efficiency. The novel ITO/n-CdS/n-GaAs/p-Sb2Se3/p +-CuO HTL/Au heterostructure achieved a huge ...
Exploring Cu-Doping for Performance Improvement in Sb2Se3 Photovoltaic Solar Cells
International Journal of Molecular Sciences
Copper-doped antimony selenide (Cu-doped Sb2Se3) thin films were deposited as absorber layers in photovoltaic solar cells using the low-temperature pulsed electron deposition (LT-PED) technique, starting from Sb2Se3 targets where part of the Sb was replaced with Cu. From a crystalline point of view, the best results were achieved for thin films with about Sb1.75Cu0.25Se3 composition. In order to compare the results with those previously obtained on undoped thin films, Cu-doped Sb2Se3 films were deposited both on Mo- and Fluorine-doped Tin Oxide (FTO) substrates, which have different influences on the film crystallization and grain orientation. From the current-voltage analysis it was determined that the introduction of Cu in the Sb2Se3 absorber enhanced the open circuit voltage (VOC) up to remarkable values higher than 500 mV, while the free carrier density became two orders of magnitude higher than in pure Sb2Se3-based solar cells.
Nano Energy, 2018
PbS quantum dot solar cells are promising candidates for low-cost and highly efficient light harvesting devices owing to their solution processability and bandgap tunability. The p-type ethanedithiol (EDT) treated PbS quantum dot film plays an important role in PbS quantum dot solar cells with an n-i-p junction device structure. However, despite their sulphur-rich surface the EDT-treated PbS quantum dot film still have a relatively low carrier concentration. Higher carrier concentrations in this layer are desirable to extend depletion regions and improve hole extraction. Also imbalances in the charge mobility between the intrinsic layer and the p-type layer may lead to charge build-up at this interface. These obstacles limit further improvement of the device performance. Herein, we utilize EDTtreated Ag-doped PbS quantum dots as a p-type layer to fabricate PbS quantum dot photovoltaic cells. The carrier carrier concentration, mobility and band extrema as well as Fermi energy levels of Ag doped PbS quantum dot film can be tailored by tuning the Ag/Pb mole ratio from 0.0% to 2.0% during fabrication. The device performance has been significantly improved from 9.1% to 10.6% power conversion efficiency largely due to improvements in carrier concentration in the PbS-EDT layer through the incorporation of silver impurities.
Solar RRL
Antimony chalcogenide Sb 2 Se 3 is an emerging photovoltaic absorber due to its appropriate bandgap (%1.1 eV), high absorption coefficient (>10 5 cm À1), suitable p-type conductivity, low toxicity, earth abundance, and excellent stability. However, the stringent growth condition and low photovoltage limit its power conversion efficiency (PCE). Herein, via a combined theoretical and experimental study, interface engineering via an oxygenated cadmium sulfide (CdS) window layer (CdS:O) is found to be an effective approach to improve the device performance of CdS:O/Sb 2 Se 3 solar cells. The sputtered oxygenated CdS:O window layer can be used to replace conventional chemical-bath-deposited CdS window layer in the Sb 2 Se 3 devices. The best PCE of 7.01% is demonstrated in the superstrate configuration of fluorine-doped SnO 2 /CdS:O/Sb 2 Se 3 /graphite with a high open-circuit voltage of 0.432 V, where Sb 2 Se 3 is fabricated using the close space sublimation technique. The interfacial diffusion between Sb 2 Se 3 and sputtered CdS:O is significantly suppressed by introducing oxygen at the interface, which prevents Cd diffusion and the formation of Cd interstitials. Combined device physics characterizations and theoretical calculations reveal that oxygen in the CdS:O/Sb 2 Se 3 interface can increase depletion region, built-in voltage, and reduce interfacial recombination. These findings provide the guidance to optimize quasi-one-dimensional non-cubic earth-abundant chalcogenide photovoltaic devices through interface engineering.
Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics
ACS applied materials & interfaces, 2016
The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band-gap CQDs with different ligands we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band-gap QDs causing an upshift of valence band position due to 1, 2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation.
Frontiers in Chemistry
Simple compound antimony selenide (Sb2Se3) is a promising emergent light absorber for photovoltaic applications benefiting from its outstanding photoelectric properties. Antimony selenide thin film solar cells however, are limited by low open circuit voltage due to carrier recombination at the metallic back contact interface. In this work, solar cell capacitance simulator (SCAPS) is used to interpret the effect of hole transport layers (HTL), i.e., transition metal oxides NiO and MoOx thin films on Sb2Se3 device characteristics. This reveals the critical role of NiO and MoOx in altering the energy band alignment and increasing device performance by the introduction of a high energy barrier to electrons at the rear absorber/metal interface. Close-space sublimation (CSS) and thermal evaporation (TE) techniques are applied to deposit Sb2Se3 layers in both substrate and superstrate thin film solar cells with NiO and MoOx HTLs incorporated into the device structure. The effect of the HTL...
Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques
Solar
Sb2Se3, as an earth-abundant and low-toxic material, has emerged as one of the most interesting absorbers for clean renewable power generation technologies. Due to its optical properties, especially bandgap and absorption coefficient, the number of papers on Sb2Se3-based solar cells has been constantly increasing in the last ten years, and its power conversion efficiency has raised from 1% in 2014 to 10.57% in 2022. In this review, different Sb2Se3 solar cells’ fabrication technologies based on physical vapor deposition are described and correlated to the texture coefficient (ribbon orientation). Moreover, recent research works of the most promising solar cell configurations with different electron-transporting layers and hole-transporting layers are analyzed with a special emphasis on photovoltaic performances. Furthermore, different Sb2Se3 doping techniques are discussed. All these aspects are considered as new strategies to overcome the Sb2Se3 solar cell’s actual limitations.