A fully integrated 24GHz eight-element phased-array receiver in silicon (original) (raw)
Related papers
2004
This paper presents an on-chip multiphase LO generation and distribution technique used to implement a fully-integrated 24-GHz 8-path phased-array receiver in silicon. Sixteen LO phases are generated by an LC ring oscillator and distributed by a symmetric network to all eight paths. The 8-path array achieves a phase shifting resolution of 22.5 o and a total array gain of 61dB. Index Terms -RF receiver, phased-array, wireless communication, beam forming, multiple antenna systems, transmission lines.
A fully integrated 24 GHz 8-path phased-array receiver in silicon
2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)
Available frequency spectrum, co-channel interference, and multi-path fading determine the data-rate limits of today's highspeed wireless communications. Higher frequencies offer more bandwidth, while enabling multiple antenna approaches by reducing the required antenna size and spacing.
A 24GHz SiGe phased-array receiver-LO phase-shifting approach
IEEE Transactions on Microwave Theory and Techniques, 2005
A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10 for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB.
A 44–46-GHz 16-Element SiGe BiCMOS High-Linearity Transmit/Receive Phased Array
IEEE Transactions on Microwave Theory and Techniques, 2012
This paper presents a 16-element-band transmit/ receive phased array with high receive linearity and low power consumption. The design is based on the all-RF architecture with passive phase shifters and a 1:16 Wilkinson network. An input from 9 to 10 dBm and a noise figure of 10-11.5 dB at 44-46 GHz is achieved in the receive mode with a power consumption of 0.95 W. In the transmit mode, each channel has an output of 3-2 dBm and of 6-4 dBm at 44-46 GHz with a power consumption of 1.16 W. The design results in a low root mean square (rms) gain error due to a high-resolution variable gain amplifier in each channel. Measurements on multiple channels show near-identical gain and phase response in both the transmit and receive mode due to the use of a symmetrical passive combiner. The measured on-chip coupling is 40 dB and results in insignificant additional rms and phase error.
Integrated Phased Array Systems in Silicon
Proceedings of The IEEE, 2005
Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-m silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-m CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.
A fully-integrated dual-polarization 16-element W-band phased-array transceiver in SiGe BiCMOS
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
This paper presents a multi-function, dualpolarization phased array transceiver supporting both radar and communication applications at W-band. 32 receive elements and 16 transmit elements with dual outputs are integrated to support 16 dual polarized antennas in a package. The IC further includes two independent 16:1 combining networks, two receiver downconversion chains, an up-conversion chain, a 40GHz PLL, an 80GHz frequency doubler, extensive digital control circuitry, and on-chip IF/LO combining/distribution circuitry to enable scalability to arrays at the board level. The fully-integrated transceiver is fabricated in the IBM SiGe BiCMOS 0.13um process, occupies an area of 6.6X6.7mm 2 , and operates from 2.7V (analog/RF) and 1.5V (digital) supplies. Multiple operating modes are supported including the simultaneous reception of two polarizations with a 10GHz IF output, transmission in either polarization from an IF input, or single-polarization transmission/reception from/to I&Q base-band signals (2.5W RX, 2.9W TX). Measurement results show 8dB receiver NF and 2dBm transmitter output power per element at 94GHz in both polarizations.
A 16-element phased-array receiver IC for 60GHz communications in SiGe BiCMOS
2010
A 0.12-μm SiGe phased-array Rx IC for beam-steered wireless communication in the 60-GHz band is described. It has 16 RF phase-shifting front-ends with 11° digital phase resolution and hybrid passive-active RF signal combining. It achieves 7.4-7.9 dB NF (not including 12-dB array gain) over the 4 IEEE channels. The IC has a double-conversion superheterodyne Rx core with a maximum of 72 dB of power gain in 1-dB steps, and the on-chip synthesizer achieves <; -90 dBc/Hz Rx phase noise at 1MHz offset. The IC draws 1.8 W at 2.7 V with a die area of 38 mm2. It has been packaged with 16 antennas in a 288-pin organic BGA and phased-array beamsteering has been demonstrated, along with 5+ Gb/s wireless links using 16-QAM OFDM.
A Fully-Integrated 16-Element Phased-Array Receiver in SiGe BiCMOS for 60-GHz Communications
IEEE Journal of Solid-State Circuits, 2011
A fully-integrated 16-element 60-GHz phased-array receiver is implemented in IBM 0.12-m SiGe BiCMOS technology. The receiver employs RF-path phase-shifting and is designed for multi-Gb/s non-line of sight links in the 60-GHz ISM band (IEEE 802.15.3c and 802.11ad). Each RF front-end includes variable-gain LNAs and phase shifters with each front-end capable of 360 variable phase shift (11.25 phase resolution) from 57 GHz to 66 GHz with coarse/fine gain steps. A detailed analysis of the noise trade-offs in the receiver array design is presented to motivate architectural choices. The hybrid active and passive signal-combining network in the receiver uses a differential cross-coupled Gysel power combiner that reduces combiner loss and area. Each array front-end has 6.8-dB noise figure (at 22 C) and the array has 10 dB to 58 dB programmable gain from single-input to output. Sixteen 60-GHz aperture-coupled patch-antennas and the RX IC are packaged together in multi-layer organic and LTCC packages. The packaged RX IC is capable of operating in all four IEEE 802.15.3c channels (58.32 to 64.8 GHz). Beam-forming and beam-steering measurements show good performance with 50-ns beam switching time. 5.3-Gb/s OFDM 16-QAM and 4.5 Gb/s SC 16-QAM links are demonstrated using the packaged RX ICs. Both line-of-sight links (7.8 m spacing) and non-line-of-sight links using reflections (9 m total path length) have been demonstrated with better than 18 dB EVM. The 16-element receiver consumes 1.8 W and occupies 37.7 mm of die area.
24 GHz LNA and vector modulator phase shifter for phased-array receiver in CMOS technology
2013 IEEE International Symposium on Phased Array Systems and Technology, 2013
With the rapid development of the applications in short range communication, phased-array receiver working at 24 GHz can provide enhanced gain performance at desired transmission direction. Also there is the wide signal bandwidth, i.e. 250 MHz free licensed spectrum at this frequency. In the phasedarray front-end, the key component is the phase shifter, which decides the tuning resolution of beam-forming. The challenge of the design work comes from the low-power, low-noise and lowcost requirement. This paper explores the design procedure of a Vector Modulation Phase Shifter (VMPS), consisting of a 90 • hybrid, a variable gain amplifier and the Wilkinson combiner. The variable gain amplifier is fabricated in 90nm complementary metal-oxide-semiconductor technology, and the passive hybrid and the Wilkinson combiner are designed on the printed circuit board with RO4003 substrate. After combining the measurement results of each block, the VMPS shows 45 • phase shifts with 7 • phase error, and 9 mW consumption.