Chemical Vapor Deposition of Ga2O3 Thin Films on Si Substrates (original) (raw)

Amorphous Ga 2 O 3 films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, Ga(O i Pr) 3 , as single precursor. Deposition was carried out in the substrate temperature range 400-800 °C. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric Ga 2 O 3 thin films at 500-600 °C. XPS depth profiling by Ar + ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ∼10 A. The interfacial layer of the Ga 2 O 3 /Si was measured to be ∼35 A thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-m...