Effect of target self-bias on carbon nitride thin films deposited by RF magnetron sputtering (original) (raw)

2001, Solid State Communications

Analysis of carbon nitride ®lms (CN x) deposited by RF magnetron sputtering on crystalline silicon, under different target selfbias, is reported. The properties of ®lms were determined in their as-deposited state using X-ray photoelectron spectroscopy (XPS), IR absorption, transmission spectroscopy and residual stress measurements. The presence of various types of C±N bonds, as well as of hydrogen and oxygen, is revealed. A good correlation is observed between the variation of N/C ratio, the optical gap E 04 and the internal stress as a function of the target bias. The optical gap E 04 decrease is discussed in terms of N/C ratio evolution, the sp 2 bond content and the local distortions of the sp 2 bonds.

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