Experimental evidence of photonic band gap in hybrid Si/SiNOCH multilayer structure at the infrared range (original) (raw)

Optics Communications

Abstract

Abstract Hybrid one dimensional photonic crystal (1D PC) based on alternating layers of inorganic materials, the silicon (Si), grown by radiofrequency magnetron sputtering and organic compound, HMDSO mixed with nitrogen N 2 (HMDSO+N2), deposited by radiofrequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) for different N 2 /HMDSO flow rate at a fixed power of 200W. As the refractive index of silicon (Si) is n=3.4, to obtain a good contrast index between the inorganic and organic layers leading to appearance of large photonic band gap, we have varied the flow of the mixed gaz (HMDSO+N2) for having a lower refractive index 1.7 corresponding to a layer with the same chemical composition element of the SiNOCH material as confirmed by IR measurement. After optimization of the Si and SiNOCH thickness layers with respect to the Bragg low, we have measured the photonic band gap (PBG) of Si/SiNOCH photonic structure through transmission and reflection spectra. The PBG appears after 5 periods of alternating layers with a width of 740 nm in the near infrared (NIR) region centered at 1500 nm. Our experimental results are interpreted successfully by a theoretical model based on the transfer matrix method (TMM).

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