Structural studies of silicon oxynitride layers formed by low energy ion implantation (original) (raw)
2008, Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
Silicon oxynitride (Si xO yN z) layers were synthesized by implanting 16O 2+ and 14N 2+ 30 keV ions in 1:1 ratio with fluences ranging from 5 × 10 16 to 1 × 10 18 ions cm -2 into single crystal silicon at room temperature. Rapid thermal annealing (RTA) of the samples was carried out at different temperatures in nitrogen ambient for 5 min. The FTIR studies show that the structures of ion-beam synthesized oxynitride layers are strongly dependent on total ion-fluence and annealing temperature. It is found that the structures formed at lower ion fluences (˜1 × 10 17 ions cm -2) are homogenous oxygen-rich silicon oxynitride. However, at higher fluence levels (˜1 × 10 18 ions cm -2) formation of homogenous nitrogen rich silicon oxynitride is observed due to ion-beam induced surface sputtering effects. The Micro-Raman studies on 1173 K annealed samples show formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures with crystalline silicon beneath it for lower and higher ion fluences, respectively. The Ellipsometry studies on 1173 K annealed samples show an increase in the thickness of silicon oxynitride layer with increasing ion fluence. The refractive index of the ion-beam synthesized layers is found to be in the range 1.54-1.96.
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