Internal quantum efficiency of Si-drift solar cells with nonuniformly and heavily doped emitter (original) (raw)

2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET), 2016

Abstract

This work focuses to develop an analytical model of the internal quantum efficiency for a drift-field Si-solar cell with non-uniformly and heavily doped emitter region. The resulting mathematical intractability owing to the consideration of all the non-ideal effects have been resolved by employing an elegant approximation technique. The developed model shows that the drift-field solar cells have significantly higher internal quantum efficiency over the uniformly-doped Si-solar cells, particularly for high energy photons.

Dr. Md. Iqbal Bahar Chowdhury hasn't uploaded this paper.

Let Dr. Md. Iqbal Bahar know you want this paper to be uploaded.

Ask for this paper to be uploaded.