HfSiON-CMOSFET technology for low standby power application (original) (raw)

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Abstract

ABSTRACT Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET is reviewed. It is revealed that most parameters are affected when HfSiON with high Hf concentration is used, and thus, careful re-engineering is indispensable. We demonstrate HfSiON-CMOSFET for hp 65 nm LSTP application which meets the specification of ITRS roadmap by an adequate re-engineering

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