Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films (original) (raw)
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Near-infrared optical nonlinearities in amorphous chalcogenides
Optics Communications, 1994
The measurement of the nonresonant third-order nonlinearity of three chalcogenide glasses is reported. Using the Z-scan technique, both the refractive and the absorptive parts of the nonlinearity are resolved, including their sign. It is shown that Ag-doping of As2S 3 produces a change of sign and a dramatic enhancement of the nonlinear refractive index.
Systematic z-scan measurements of the third order nonlinearity of chalcogenide glasses
Optical Materials Express, 2014
We report measurements of the third order optical nonlinearity of 51 chalcogenide glasses in the near infrared. Substituting more polarizable elements (Se for S, Sb for As) into the glasses increased their nonlinearity but also reduced the optical bandgap increasing two-photon absorption. Overall the measured values are an extremely good fit to the semi-empirical Miller's rule whilst the normalized real and imaginary parts are in satisfactory agreement with the scaling for indirect gap semiconductors reported by Dinu. At 1550nm we find that there is an upper limit to the nonlinearity of ≈10 −13 cm 2 /W above which two-photon absorption becomes significant.
Journal of Materials Science: Materials in Electronics, 2006
It is proposed a quasi-linear algorithm for the solving the kinetic equations system, which describes the excitation and relaxation processes in the electronic and phononic subsystems of amorphous chalcogenides. The nonlinear interaction between an optical field and an amorphous chalcogenide medium is analyzed. The nonlinear interaction between an excitation incident optical field and the non-crystalline chalcogenide materials, evidences the specific nonlinear phenomena in amorphous semiconductors, which have no correspondent in the case of crystalline semiconductors. The model is limited to phenomena occurring in chalcogenide semiconductors, simultaneously with the optical field propagation, by neglecting the excitation phenomena.
Chalcogenide Letters
The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se85-xTe15Bix (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n2), two-photon absorption coefficient (β2) and third-order susceptibility (χ (3)) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2 is positive while for Bi=5 atomic % n2 is negative. The behavior of n2 by using different physical parameters are exlpained. The comparison of experimental and theoretical values of n2 with pure silica are also studied. The presence of the valley at focus in open aperture Z-scan graph demonstrates strong reverse saturable absorption. The figure of merit (FOM) for the SeTe-Bi chalcogenide thin films is found to be less than 1 and are beneficial for all-optical switch devices.
Phase Transitions, 2014
A new organic NLO material l-asparaginium l-tartarate (AST) was synthesized and good quality crystals were grown from aqueous solution. The solubility and metastable zone width for AST solution were determined. Single crystal X-ray diffraction and powder X-ray diffraction analyses were carried out to confirm structure and crystalline nature of AST crystal. Optical transmittance and second harmonic generation efficiency (SHG) of the grown crystal were studied by UV-vis-NIR spectrum and Kurtz powder technique respectively. The transmittance of AST crystal was used to calculate the refractive index (n), the extinction coefficient (k) and reflectance (R). The laser induced surface damage threshold for the grown crystal was measured using Nd:YAG laser.
We have carried out an experimental study of the nonlinear optical properties of multilayer heterostructures based on zinc chalcogenides when excited by ultrashort laser pulses. We have observed a strong change in the optical properties of the samples over a broad spectral region for two-photon and one-photon excitation of the ZnSe sublattice. The fast relaxation time of the nonlinearity is ~2-5 psec in both cases. We propose a physical model qualitatively explaining the observed effects.
Quantification of nonlinear absorption in ternary As-Sb-Se chalcogenide glasses
Journal of Applied Physics, 2019
In this article, we studied intensity dependent third order nonlinear optical response in ternary As 40 Sb 7 Se 53 and As 40 Sb 10 Se 50 chalcogenide glasses by employing the nanosecond Z-scan technique. At low intensities, we observed saturable absorption in As 40 Sb 7 Se 53 which makes a remarkable transition to reverse saturable absorption at higher intensities. On the other hand, when the Sb concentration increased in As 40 Sb 10 Se 50 , saturable absorption disappears and the sample exhibits only two-photon absorption. Experimental results further indicate that the strong two-photon absorption in our samples can be exploited to fabricate high performance solid state optical limiting devices for the next generation all-optical network.
Nonlinear optical properties of zinc oxide doped bismuth thin films using Z-scan technique
Optical Materials, 2016
ZnO doped Bi thin films were grown on glass substrates by spray ultrasonic technique. This paper presents the effect of Bi doping concentration on structural and nonlinear optical properties of zinc oxide thin films. These thin films were characterized by X-ray diffractometer technique. XRD analysis revealed that the ZnO:Bi thin films indicated good preferential orientation along c-axis perpendicular to the substrate. The nonlinear optical properties such as nonlinear absorption coefficient (b) and third order nonlinear susceptibility (Imv (3)) are investigated. The calculations have been performed with a Z scan technique using Nd:YAG laser emitting 532 nm. The reverse saturable absorption (RSA) mechanism was responsible for the optical limiting effect. The results suggest that this material considered as a promising candidate for future optical device applications.
Nonlinear Optical Properties of ZnO Thin Film at Low Laser Intensity Using Z-Scan Technique
Rafidain Journal of Science, 2021
In this work, a highly sensitive well-known z-scan technique was employed to study the nonlinear optical properties of Zinc Oxide thin films as a function of low laser fluencies. The transmissions of the continues-wave red laser diode with wavelength of (650 nm) were measured from the ZnO thin film sample with thickness of (425 nm). The thin film used in this study was deposited on the glass substrates based on atmospheric pressure chemical vapor deposition (APCVD) technique. The measurements were obtained at low laser powers ranging from (1.9-2.5) mW. The results indicated that the nonlinear absorption coefficient, refractive index and the third-order nonlinear optical susceptibility increase with increasing the laser intensity. The obtained curves of the closed aperture showed a positive sign of the nonlinear refractive index which in turn attributed to the selfdefocusing of the material. The optical parameters obtained in this work are relatively comparable with that obtained elsewhere. The results also confirm the reliability of the z-scan approach even at low laser intensities.