Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power (original) (raw)

Abstract

High-power diode lasers with heavily strained In͑Al͒GaAsSb type-I quantum-well active regions emitting at 3.1 m at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K.

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