Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power (original) (raw)
Related papers
Semiconductor Science and Technology, 2004
Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 µm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 µm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 µm is discussed.
2004
Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 µm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 µm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 µm is discussed.
Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$\mu$m Wavelength Range
IEEE Photonics Technology Letters, 2010
Type-I quantum-well (QW) diode lasers based on AlInGaAsSb-InGaAsSb-AlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 m correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.
Advances in Type-I GaSb Based Lasers
Japanese Journal of Applied Physics, 2008
We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuouswave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050 mW at 2.4 mm and 85 mW at 3.1 mm.
Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$\mu$m Wavelength Range
IEEE Photonics Technology Letters, 2000
Type-I quantum-well (QW) diode lasers based on AlInGaAsSb-InGaAsSb-AlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 m correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance. Index Terms-Diode laser, GaSb, midinfrared, type-I. W ITHIN the past decade, semiconductor lasers demonstrated the ability to operate in continuous-wave (CW) at room temperature (RT) in 2-to 3-m midwave-infrared (mid-IR) spectral band [1], [2] and well above 4 m [3]-[5].
Applied Physics Letters, 2003
We have fabricated and characterized 2.7 and 2.8 m wavelength In͑Al͒GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 m apertures. Continuous wave operation up to 500 mW was recorded at 16°C from 2.7 m lasers, while 160 mW was obtained from 2.8 m lasers. Threshold current densities as low as 350 A/cm 2 were recorded from 2.7 m lasers with external quantum efficiencies of 0.26 photon/electrons. The maximum wall-plug efficiency was 9.2% at a current of 2.4 A. A peak power of 2.5 W was recorded in pulsed-current mode operation at 20°C at 2.7 m and 2 W at 2.8 m. Characteristic temperatures of T 0 ϭ71 K and T 1 ϭ86 K were measured from the 2.7 m devices. T 0 ϭ59 K and T 1 ϭ72 K for the 2.8 m lasers. The devices have differential series resistances of about 0.18 ⍀ with estimated thermal resistances of about 5 K/W.
Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb
IEEE Journal of Selected Topics in Quantum Electronics, 2015
We describe how growth at low temperatures can enable increased active layer strain in GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission wavelength. Critical thickness and roughening limitations typically restrict the number of quantum wells that can be grown at a given wavelength, limiting device performance through gain saturation and related parasitic processes. Using growth at a reduced substrate temperature of 350 °°°°C, compressive strains of up to 2.8% have been incorporated into GaInAsSb quantum wells with GaSb barriers; these structures exhibited peak room-temperature photoluminescence out to 3.96 m. Using this growth method, low-threshold ridge waveguide lasers operating at 20 °C and emitting at 3.4 m in pulsed mode were demonstrated using 2.45% compressively strained GaInAsSb/GaSb quantum wells. These devices exhibited a characteristic temperature of threshold current of 50 K, one of the highest values reported for type-I quantum-well laser diodes operating in this wavelength range. This temperature stability is attributable to the increased valence band offset afforded by the high strain values, due to the simultaneously high quantum well indium and antimony mole fractions. Exploratory experiments using bismuth both as a surfactant during quantum well growth, as well as in dilute amounts incorporated into the crystal were also studied. Both methods appear promising avenues to surmount current strain-related limitations to laser performance and emission wavelength.
Cascade Type-I Quantum Well GaSb-Based Diode Lasers
Photonics, 2016
Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 µm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an~100-µm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 µm, 980 mW near 3 µm, 500 mW near 3.18 µm, and 360 mW near 3.25 µm at 17-20˝C-a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with~100 mW of output power near and above 3 µm and above 150 mW near 2 µm.