Very Low-Voltage Operation Capability of Cmos Ring Oscillators and Logic Gates (original) (raw)
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2006
The operation of a CMOS ring oscillator with supply voltage values as low as ~80 mV are experimentally investigated. The low-voltage operation of the ring oscillator based on a single inverter, is analyzed. The use of body voltage of MOS transistors as a means for controlling the frequency of oscillation of CMOS ring oscillators are demonstrated. The feasibility of very low-voltage operation of logic CMOS gates such as NAND gate is confirmed with simulation.
A 0.4 V Low Frequency Voltage-Controlled Ring Oscillator Using DTMOS Technique
In this paper, an ultra-low power ultra-low voltage five-stage low frequency voltage-controlled single-ended ring oscillator using dynamic threshold voltage MOSFET (DTMOS) is presented. The proposed oscillator is designed and simulated using TSMC 0.18μm RF CMOS technology with 0.4 V power supply. In this design all transistors working at the sub-threshold (weak inversion) region. The output frequency ranges from 26.6-210.5 kHz with control voltages of 0 V to 0.4 V. Its power consumption and phase noise at a 100 kHz offset at the minimum (maximum) oscillation frequency is respectively 6.42nW (8.62 nW) and -120.5 dBc/Hz (-113.15 dBc/Hz).
A voltage-controlled ring oscillator based on an FGMOS transistor
Microelectronics Journal
This paper can be divided into two parts. The first part contains a comprehensive survey on the applications of voltage-controlled oscillators and the innovations in their designs. The second part presents a voltage-controlled ring oscillator (VCRO) based on using a floating-gate metal-oxide semiconductor (FGMOS) transistor in its delay element. According to this VCRO, there are no extra elements; instead, the control behavior is included in the delay element itself. The presented VCRO is analyzed quantitatively with the expressions of the oscillation frequency in terms of the control voltage and the average power consumption derived. The presented VCRO has a good linearity over the full range from 0 V to the power-supply voltage and doesn't suffer from the need to turn on the MOS transistor. The effects of the process, voltage, and temperature (PVT) variations and the technology scaling on the performance of this VCRO are also investigated. The performance of the presented VCRO is compared with that of other schemes by simulation adopting the Berkeley predictive technology model (BPTM) of the 45 nm CMOS technology with a power-supply voltage, V DD , equal to 1 V. 1.1. Oscillator applications The applications of oscillators include clock-signal generation in microprocessors or synchronous digital systems, carrier synthesis in cellular telephones [3], phase-locked loops (PLLs), and frequency translation in cellular phones. A CMOS VCO can be realized using ring oscillators, relaxation oscillators, or an LC resonant circuit [6]. LC oscillators and ring oscillators are considered the most common types of CMOS oscillators. In the following, a comparison between these two types is provided.
A 0.5 V Sub-Threshold CMOS Current-Controlled Ring Oscillator for IoT and Implantable Devices
Journal of Low Power Electronics and Applications
A current-controlled CMOS ring oscillator topology, which exploits the bulk voltages of the inverter stages as control terminals to tune the oscillation frequency, is proposed and analyzed. The solution can be adopted in sub-1 V applications, as it exploits MOSFETS in the subthreshold regime. Oscillators made up of 3, 5, and 7 stages designed in a standard 28-nm technology and supplied by 0.5 V, were simulated. By exploiting a programmable capacitor array, it allows a very large range of oscillation frequencies to be set, from 1 MHz to about 1 GHz, with a limited current consumption. Considering, for example, the five-stage topology, a nominal oscillation frequency of 516 MHz is obtained with an average power dissipation of about 29 µW. The solution provides a tuneable oscillation frequency, which can be adjusted from 360 to 640 MHz by controlling the bias current with a sensitivity of 0.43 MHz/nA.
2017
This Paper reports on design and analysis of CMOS Voltage Controlled Ring Oscillator (VCRO) based on the delay cells proposed by Changzhi Li and Jenshan Lin. The two stage CMOS VCRO exhibits very low power consumption and wide tuning range when realized using GPDK 45 nm CMOS process. The oscillator has a very wide tuning range from 6 GHz to 17 GHz. Because of its wide tuning range, it can be used for electronic warfare applications. It has also very low power consumption of about 3µW with a supply voltage of 1 V. The phase noise of this ring oscillator is found to be-78 dBC/Hz @10 MHz offset which can be improved by adding more number of stages.
On the Low-power Design, Stability Improvement and Frequency Estimation of the CMOS Ring Oscillator
In this paper, a simple method allowing optimization of the CMOS ring oscillator frequency dispersion and power consumption is presented. It is shown, that for range of tens of MHz and less, the power consumption and variation of the frequency can be considerably reduced by using 3-stage, resistively coupled ring oscillator, with minimum channel width W and large channel length L MOS transistors. In addition, a simple analysis allowing to estimate the oscillator frequency from the process and transistor parameter values is provided. Keywords Ring oscillator, CMOS inverter delay, CMOS inverter chain, Frequency stability of ring oscillator.
Process and Temperature Compensation of CMOS Ring Oscillators
2016
In order to compensate RO's process, temperature and voltage variations (PVT) several CMOS effects have been studied such as VT sensing and Zero Temperature Coefficient (ZTC). A single-ended RO topology was analysed taking into consideration theoretical studies, PVT behavior and sensitivity to control and supply voltage. The techniques used to obtain these characterizations helped to obtain, organize and classify data in a efficient and scalable manner. The modified false-position method was implemented to characterize the RO PVT behavior efficiently for a given target oscillation frequency, allowing to explore different RO's and specific transistor influence. For classification a coefficient of determination, pronounced R squared, was implemented allowing to know the goodness of fit of a line for instance RO's control voltage, and find straight, parallel and evenly spaced lines. Analysis of the supply and control voltage sensitivity to a variation was made allowing good...
Design of Ring Oscillator based VCO with Improved Performance
Voltage Controlled Oscillator plays significant role in communication system design. The design of Voltage Controlled Oscillator (VCO) with low power consumption and high frequency range is presented in this paper. The VCO is based on a single ended CMOS inverter ring oscillator. Accurate frequency of oscillation in Ring Oscillator is an important design issue. A Voltage Controlled Ring Oscillator with wide tuning range from 917.43MHz to 4189.53MHz can be achieved using bulk driven technique by varying the threshold voltage of the MOS circuits. The circuit is designed using 0.13µm CMOS process for a supply voltage of 1V. Simulation results show better accuracy compared to existing current staved ring VCO using different number of inverter stages.
Design and performance analysis of CMOS based ring oscillator
Journal of emerging technologies and innovative research, 2018
The more we are heading towards the future the demand for low power and small size of electronic devices is growing rapidly. CMOS (complementary metal oxide semiconductor) integrated circuits are the digital flourishing technology for the modern information era. Ring oscillator find perspective applications in biomedical devices, RFID tags and wireless sensor networks. In this paper CMOS based 7 stage ring oscillator has been designed and simulated by using LT spice for various parameters such as power consumption, frequency and delay. Index Terms Complementary metal oxide semiconductor (CMOS), Radio frequency identification (RFID), Ring Oscillator.