Effect of near-surface band bending on dopant profiles in ion-implanted silicon (original) (raw)

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Journal of applied …, 2004

Abstract

Recent experimental work has demonstrated the existence of band bending at the interface after ion implantation. The present work employs FLOOPS-based numerical simulations to investigate the effects this bending can have upon dopant profiles that evolve during transient ...

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