XPS Studies of the SiO2 Substrates and Thermoelectric Thin Films of Sn/Sn+SnO2 under the Effects of the Different Thermal Treatments (original) (raw)
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Thermoelectric power (α) and I-V characteristics study of SnO2 thin filmsas a function of thickness
Advances in Applied Science Research, 2015
Thin films of tin (Sn) of varying thicknesses have been deposited on glass substrates in a vacuum. After annealing thin films of tin were heated in an air, forms tin oxide (SnO2) films. Thickness dependent thermoelectric power (α) of the films has been measured. The current for different voltages and different thicknesses of SnO2 thin films were measured. The current and voltage characteristics of SnO2 thin films for different thickness have been predicted
SnO2 Nanocrystalline Thin Films by XPS
Surface Science Spectra, 2000
SnO 2 nanocrystalline thin films are deposited on Al 2 O 3 and SiO 2 /Si͑100͒ by chemical vapor deposition starting from diethylaminodimethylstannane ͑IV͒ ͓͑CH 3 ͒ 2 Sn͑N͑C 2 H 5 ͒ 2 ͒ 2 ͔. X-ray photoelectron spectra of the principal core levels for the surface of a SnO 2 film on SiO 2 /Si͑100͒ are presented.
Synthesis and characterization of SnO2 thin films prepared by dip-coating method
15th Brazilian Workshop on Semiconductor Physics, 2012
The optical, electrical and structural properties of SnO are responsible for a large number of technological 2 applications such as gas sensors, optical-electonic devices, varistors and displays. In this paper, we report the preparation of SnO thin films deposited on glass, quartz and silicon substrates by the technique of sol-gel dip-2 coating. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ellipsometry and Mössbauer spectroscopy. We combine the experimental results with ab initio all-electrons calculations , using the density functional theory within the framework of the full-potential linear augmented plane waves method, in order to extract hyperfine parameters. The results show that the synthesis method is able to produce good quality films and that the theory can be helpful to determine quantities difficult to be measured experimentally.
Applied Surface Science, 2010
Results of experimental studies of the influence of substrate preparation on the surface chemistry and surface morphology of the laser-assisted chemical vapour deposition (L-CVD) SnO 2 thin films are presented in this paper. The native Si(1 0 0) substrate cleaned by UHV thermal annealing (TA) as well as thermally oxidized Si(1 0 0) substrate cleaned by ion bombardment (IBA) have been used as the substrates. X-ray photoemission spectroscopy (XPS) has been used for the control of surface chemistry of the substrates as well as of deposited films. Atomic force microscopy (AFM) has been used to control the surface morphology of the L-CVD SnO 2 thin films deposited on differently prepared substrates. Our XPS shows that the L-CVD SnO 2 thin films deposited on thermally oxidized Si(1 0 0) substrate after cleaning with ion bombardment exhibit the same stoichiometry, i.e. ratio [O]/[Sn] = 1.30 as that of the layers deposited on Si(1 0 0) substrate previously cleaned by UHV prolonged heating. AFM shows that L-CVD SnO 2 thin films deposited on thermally oxidized Si(1 0 0) substrate after cleaning with ion bombardment exhibit evidently increasing rough surface topography with respect to roughness, grain size range and maximum grain height as the L-CVD SnO 2 thin films deposited on atomically clean Si substrate at the same surface chemistry (nonstoichiometry) reflect the higher substrate roughness after cleaning with ion bombardment.
Vacuum, 2020
The effect of balanced magnetron (BM) and unbalanced magnetron (UBM) configurations, in RF sputtering process, on the surface properties of SnO 2 thin films has been investigated. X-ray photoelectron spectroscopy (XPS) Sn3d and O1s core spectra reveal that the films deposited at RF power of 250 W under BM configuration consist of Sn 4þ oxidation states, while those deposited under UBM configuration consist of Sn 4þ and Sn 2þ oxidation states. This has been attributed to the migration of oxygen atoms from SnO 2 , resulting in the formation of Sn interstitial and oxygen vacancies. The contact angle (θ) recordings reveal that the UBM configuration results in more hydrophobic surface (140.6 �) of SnO 2 thin films than that under BM configuration (129.6 �). Further, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM) results indicate that the SnO 2 thin films deposited under UBM configuration have better density with granular grains in comparison to that under BM configuration. The present studies establish the fact that magnetron configurations in sputtering process have significant impact on the surface properties of SnO 2 thin films.
Journal of Optoelectronics and Advanced Materials
Tin oxide thin films have been investigated by X-ray Absorption Fine Structure spectroscopy (XAFS). XAFS provides a description of the structure of the films. The paper also presents a structural characterisation of the SnO2 thin films and their crystallisation behaviour by annealing at increasing temperatures. The x-ray absorption fine structure (XAFS) of Sn LIII -edge in SnO and SnO2 have been investigated. The full multiple scattering approach has been applied to the calculation of Sn LIII edge XANES spectra of SnO. The calculations are based on different choices of one electron potentials according to Tin coordinations by using the real space multiple scattering method FEFF 8.2 code. The crystallographic and electronic structure of the SnO and SnO2 are tested at various temperature ranges from 300 to 873 K. We have found prominent changes in the XANES spectra of Tin oxide thin films by the change of the temperature. Such observed changes are explained by considering the structur...
Characterizations of SnO 2 thin films deposited on Si substrates
Thin Solid Films, 1998
In this work, we have studied the characterizations of SnO 2 thin films deposited on Si substrates. The SnO 2 thin films were polycrystalline and produced by using vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of these metal films. Surface morphology of the SnO 2 thin films was observed by atomic force microscopy (AFM). It was found that the grain size acquired in AFM images correlates with the oxidation temperature and the oxidation time. The kinetics of the grain growth is suggested to be a threedimensional diffusion limited process. The diode current-voltage (I-V) characteristic of the SnO 2 /Si heterojunctions (isotype and anisotype) was measured in the temperature range of 14-383 K. Changes in the diode ideality factor and threshold voltage with temperature are discussed.
XPS study of the L-CVD deposited SnO 2 thin films exposed to oxygen and hydrogen
Thin Solid Films, 2001
In this paper, the XPS study of SnO thin films deposited by the L-CVD technique are presented. The influence of exposition 2 of the as-deposited samples to oxygen O and hydrogen H on their stoichiometry was determined. Moreover, on the basis of 2 2 detailed shape analysis of the Sn3d and O1s XPS peaks, the chemical shift of binding energy corresponding to the change of 5r2 sample stoichiometry was separated from a shift of the binding energy corresponding to the change of interface Fermi level position E ᎐E in the band gap, using a new procedure of deconvolution of the core level XPS peaks. The shift of the Sn3d